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Publications

Refereed Journal Publications

  1. N. Tansu, D. Zhou, and L. J. Mawst, “Low Temperature Sensitive, Compressively-Strained InGaAsP Active (λ=0.78-0.85-μm) Region Diode Lasers,” IEEE Photon. Technol. Lett., Vol.12(6), pp.603-605 , June 2000. (pdf)
  2. N. Tansu, and L. J. Mawst, “High-Performance, Strain Compensated InGaAs-GaAsP-GaAs (λ=1.17μm) Quantum Well Diode Lasers,” IEEE Photon. Technol. Lett., Vol.13(3), pp.179-181, March 2001. (pdf)
  3. N. Tansu, and L. J. Mawst, “Low-Threshold Strain-Compensated InGaAs(N) (λ=1.19-1.31 μm) Quantum Well Lasers,” IEEE Photon. Technol. Lett., Vol.14(4), pp.444-446 , April 2002. [Featured in Compound Semiconductor Magazine (Institute of Physics, UK), June 2002, with title ‘Record Current Densities for InGaAsN QW Lasers’.] (pdf)
  4. N. Tansu, Y. L. Chang, T. Takeuchi, D. P. Bour, S. W. Corzine, M. R. T. Tan, and L. J. Mawst, “Temperature Analysis and Characteristics of Highly-Strained InGaAs(N)-GaAs-InGaP (λ > 1.17 μm) Quantum Well Lasers,” IEEE J. Quantum Electron., Vol.38(6), pp. 640-651, June 2002. (pdf)
  5. N. Tansu, and L. J. Mawst, “Temperature Sensitivity of 1300-nm InGaAsN Quantum-Well Lasers,” IEEE Photon. Technol. Lett., Vol.14(8), pp. 1052-1054, August 2002. (pdf)
  6. N. Tansu, N. J. Kirsch, and L. J. Mawst, “Low-Threshold-Current-Density 1300-nm Dilute-Nitride Quantum Well Lasers,” Appl. Phys. Lett., Vol.81(14), pp. 2523-2525, September 2002. [Featured in Laser Focus World (NewsBreaks Section of December 2002 issue, published by PennWell), III-V Review magazine (March 2003 issue, published by Elsevier), GaN-Net, and Microelectronics Review. The work from this paper also won the 2003 Harold A. Peterson Best Research Award (1st Prize) at the University of Wisconsin-Madison.] (pdf)
  7. N. Tansu, and L. J. Mawst, “The Role of Hole-Leakage in 1300-nm InGaAsN Quantum Well Lasers,” Appl. Phys. Lett., Vol.82(10), pp. 1500-1502, March 2003. (pdf)
  8. N. Tansu, J. Y. Yeh, and L. J. Mawst, “Improved Photoluminescence of InGaAsN-(In)GaAsP Quantum Well by Organometallic Vapor Phase Epitaxy Using Growth Pause Annealing,” Appl. Phys. Lett., Vol.82(18), pp.3008-3110, May 2003. (pdf)
  9. N. Tansu, J. Y. Yeh, and L. J. Mawst, “Extremely-Low Threshold-Current-Density InGaAs Quantum Well Lasers with Emission Wavelength of 1215-1233 nm,” Appl. Phys. Lett., vol.82(23), pp. 4038-4040, June 2003. (pdf)
  10. N. Tansu, A. Quandt, M. Kanskar, W. Mulhearn, and L. J. Mawst, “High-Performance and High-Temperature Continuous-Wave-Operation 1300-nm InGaAsN Quantum Well Lasers by Organometallic Vapor Phase Epitaxy,” Appl. Phys. Lett., vol.83(1), pp. 18-20, July 2003. [Featured in Laser Focus World, NewsBreaks Section, September 2003] (pdf)
  11. N. Tansu, J. Y. Yeh, and L. J. Mawst, “Experimental Evidence of Carrier Leakage in InGaAsN Quantum Well Lasers,” Appl. Phys. Lett., vol. 83(11), pp. 2112-2114, September 2003. (pdf)
  12. N. Tansu, J. Y. Yeh, and L. J. Mawst, “Low-Threshold 1317-nm InGaAsN Quantum Well Lasers with GaAsN Barriers,” Appl. Phys. Lett., vol. 83(13), pp. 2512-2514, September 2003. (pdf)
  13. N. Tansu, J. Y. Yeh, and L. J. Mawst, “High-Performance 1200-nm InGaAs and 1300-nm InGaAsN Quantum Well Lasers by Metalorganic Chemical Vapor Deposition,” IEEE J. Select. Topics. in Quantum Electron, vol. 9(5), pp. 1220-1227, September-October 2003. (pdf)
  14. N. Tansu, and L. J. Mawst, “Design Analysis of 1550-nm GaAsSb-(In)GaAsN Type-II Quantum Well Laser Active Regions,” IEEE J. Quantum Electron., vol. 39(10), pp. 1205-1210, October 2003. (pdf)
  15. I. Vurgaftman, J. R. Meyer, N. Tansu and L. J. Mawst, “(In)GaAsN-GaAsSb Type-II “W” Quantum-Well Lasers for Emission at (λ=1.55 μm,)” in Appl. Phys. Lett., vol. 83(14), pp.2742-2744, October 2003. (pdf)
  16. J. Y. Yeh, N. Tansu, and L. J. Mawst, “Temperature Sensitivity of 1360-nm Dilute-Nitride Quantum Well Lasers,” IEEE Photon. Technol. Lett., vol.16(3), pp. 741-743, March 2004. (pdf)
  17. J. Y. Yeh, N. Tansu, and L. J. Mawst, “Effect of Growth Pause on the Structural and Optical Properties of InGaAsN-InGaAsP Quantum Well Lasers,” J. of Crystal Growth, vol. 265 (1-2), pp. 1-7, April 2004. (pdf)
  18. J. Y. Yeh, N. Tansu, and L. J. Mawst, “Long Wavelength MOCVD Grown InGaAsN-GaAsN Quantum-Well Lasers Emitting at 1.378- 1.41-μm,” IEE Electron. Lett., vol. 40 (12), pp. 739-741, June 2004. (pdf)
  19. (Invited Review Paper) N. Tansu, J. Y. Yeh, and L. J. Mawst, “Physics and Characteristics of 1200-nm InGaAs and 1300-1400 nm InGaAsN Quantum-Well Lasers by Metalorganic Chemical Vapor Deposition,” Journal of Physics: Condensed Matter Physics, vol. 16 (31), pp. S3277-S3318, August 2004. (pdf)
  20. I. Vurgaftman, J. R. Meyer, N. Tansu, and L. J. Mawst, “InP-Based Dilute-Nitride Mid-Infrared Type-II “W” Quantum-Well Lasers,” J. Appl. Phys., vol. 96(8), pp. 4653-4655, October 2004. (pdf)
  21. J. Y. Yeh, L. J. Mawst, and N. Tansu, “Characteristics of InGaAsN/GaAsN Quantum Well Lasers Emitting in the 1.4-μm Regime,” J. of Crystal Growth, vol. 272, pp. 719-725, December 2004. (pdf)
  22. D. J. Palmer, P. M. Smowton, P. Blood, J. Y. Yeh, L. J. Mawst, and N. Tansu, “Effect of Nitrogen on Gain and Efficiency in InGaAsN Quantum Well Lasers”, Appl. Phys. Lett., vol. 86 (7), Art. No. 071121, February 2005. (pdf)
  23. N. Tansu, and L. J. Mawst, “Current Injection Efficiency of 1300-nm InGaAsN Quantum-Well Lasers,” J. Appl. Phys., vol. 97(5), Art. No. 054502, March 2005. [Comprehensive model of current injection efficiency of InGaAsN QW lasers, and its implication to the lasing characteristics. The analysis presented here can be applied in general to any QW lasers.] (pdf)
  24. O. Anton, D. Patel, C. S. Menoni, J. Y. Yeh, L. J. Mawst, J. M. Pikal, and N. Tansu, “Increased Monomolecular Recombination in MOCVD Grown 1.3-μm InGaAsN–GaAsP–GaAs QW Lasers from Carrier Lifetime Measurements,” IEEE Photon. Technol. Lett., Vol 17 (5), pp. 954-955, May 2005. (pdf)
  25. A. Thranhardt, I. Kuznetsova, C. Schlichenmaier, S. W. Koch, L. Shterengas, G. Belenky, J. Y. Yeh, L. J. Mawst, N. Tansu, J. Hader, J. V. Moloney, and W. W. Chow, “Nitrogen Incorporation Effects on Gain Properties in GaInNAs Lasers: Experiment and Theory,” Appl. Phys. Lett. vol. 86, Art. 201117, May 2005. (pdf)
  26. F. I. Lai, H. C. Kuo, Y. H. Chang, M. Y. Tsai, C. P. Chu, S. Y. Kuo, S. C. Wang, N. Tansu, J. Y. Yeh, and L. J. Mawst, “Temperature Dependent Photoluminescence of Highly Strained InGaAsN/GaAs Quantum Well (λ=1.28-1.45 μm) with GaAsP Strain-Compensated Layer”, Jpn. J. Appl. Phys., vol. 44(8), pp. 6204-6207, August 2005. (pdf)
  27. J. Y. Yeh, L. J. Mawst, and N. Tansu, “The Role of Carrier Transport on the Current Injection Efficiency of InGaAsN Quantum-Well Lasers,” IEEE Photon. Technol. Lett., vol. 17(9), pp. 1779-1881, September 2005. (pdf)
  28. L. Shterengas, G. Belenky, J. Y. Yeh, L. J. Mawst, and N. Tansu, “Differential Gain and Linewidth-Enhancement Factor in Dilute-Nitride GaAs-based 1.3?m Diode Lasers,” IEEE J. Select. Topics. in Quantum Electron, vol. 11(5), pp. 1063-1068, September-October 2005. (pdf)
  29. O. Anton, D. Patel, C. S. Menoni, J. Y. Yeh, T. T. Van Roy, L. J. Mawst, J. M. Pikal, and N. Tansu, “Frequency Response of Strain-Compensated InGaAsN/GaAsP/GaAs SQW Lasers,” IEEE J. Select. Topics. in Quantum Electron, vol. 11(5), pp. 1079-1088, September-October 2005. (pdf)
  30. A. A. Khandekar, B. E. Hawkins, T. F. Kuech, J. Y. Yeh, L. J. Mawst, J. R. Meyer, and I. Vurgaftman, and N. Tansu, “Characteristics of GaAsN/GaAsSb type-II Quantum Wells on GaAs substrates grown by Metalorganic Chemical Vapor Deposition,” J. Appl. Phys. , vol. 98(12), Art. No. 123525, December 2005. (pdf)
  31. J. Y. Yeh, L. J. Mawst, A. A. Khandekar, T. F. Kuech, J. R. Meyer, and I. Vurgaftman, and N. Tansu, “Long Wavelength Emission of InGaAsN/GaAsSb Type-II “W” Quantum Wells,” Appl. Phys. Lett., vol. 88(5), Art. No. 051115, January 2006. (pdf)
  32. J. Y. Yeh, L. J. Mawst, A. A. Khandekar, T. F. Kuech, J. R. Meyer, I. Vurgaftman, and N. Tansu, “Characteristics of InGaAsN/GaAsSb Type-II “W” Quantum Wells,” J. Crystal Growth, vol. 287 (2), pp. 615-619, Jan 2006. (pdf)
  33. O. Anton, L. F. Xu, D. Patel, C. S. Menoni, J. Y. Yeh, T. T. Van Roy, L. J. Mawst, and N. Tansu, “The Intrinsic Frequency Response of 1.3µm InGaAsN Lasers in the Range T=10-80°C,” IEEE Photon. Technol. Lett.,vol. 18(16), pp. 1774-1776, July-August 2006. (pdf)
  34. L. Xu, D. Patel, C. S. Menoni, J. Y. Yeh, L. J. Mawst, and N. Tansu, “Optical Determination of Electron Effective-Mass of Strain Compensated In0.4Ga0.6As0.995N0.005 / GaAs Single Quantum Well,” Appl. Phys. Lett., vol. 89, Art. 171112, October 2006. (pdf)
  35. R. A. Arif, Y. K. Ee, and N. Tansu, “Polarization Engineering via Staggered InGaN Quantum Wells for Radiative Efficiency Enhancement of Light Emitting Diodes,” Appl. Phys. Lett., vol. 91 (9), Art. 091110, August 2007. [Also featured in the Virtual Journal of Nanoscale Science and Technology; and Laser Focus World – News Break section, Nov 2007] (pdf)
  36. Y. K. Ee, R. A. Arif, N. Tansu, P. Kumnorkaew, and J. F. Gilchrist, “Enhancement of Light Extraction Efficiency of InGaN Quantum Wells Light Emitting Diodes Using SiO2 / Polystyrene Microlens Arrays,” Appl. Phys. Lett., vol. 91(22), Art. No. 221107, November 2007. [Also featured in the Laser Focus World, Jan 2008] (pdf)
  37. R. A. Arif, H. P. Zhao, and N. Tansu, “Type-II InGaN-GaNAs Quantum Wells Active Regions for Lasers Applications,” Appl. Phys. Lett. vol. 92(1), Art. No. 011104, January 2008. (pdf)
  38. (Invited Journal Paper) R. A. Arif, Y. K. Ee, and N. Tansu, “Nanostructure Engineering of InGaN-Based Active Regions for Improved III-Nitride Gain Media Emitting at 420-550 nm,” in Physica Stat. Solidi (A), vol. 205 (1), pp. 96-100, January 2008. (pdf)
  39. C. C. Hsu, J. H. Lin, Y. H. Lin, H. C. Kuo, S. C. Wang, W. F. Hsieh, N. Tansu, and L. J. Mawst, “Ultrafast Carrier Dynamics of InGaAsN and InGaAs Single Quantum Wells,” J. Phys. D: Appl. Phys., vol. 41(8), Art. 085107, April 2008. (pdf)
  40. Y. K. Ee, H. P. Zhao, R. A. Arif, M. Jamil, and N. Tansu, “Self-Assembled InGaN Quantum Dots on GaN Grown by Metalorganic Vapor Phase Epitaxy ,” J. Crystal Growth, vol. 310 (7-9), pp. 2320-2325, April 2008. (pdf)
  41. H. P. Zhao, R. A. Arif, Y. K. Ee, and N. Tansu, “Optical Gain Analysis of Strain-Compensated InGaN–AlGaN Quantum Well Active Regions for Lasers Emitting at 420-500 nm,” Optical and Quantum Electronics, vol. 40 (5-6), pp. 301-306, April 2008. (pdf)
  42. R. A. Arif, H. P. Zhao, Y. K. Ee, and N. Tansu, “Spontaneous Emission and Characteristics of Staggered InGaN Quantum Wells Light Emitting Diodes,” IEEE J. Quantum Electron., vol. 44(5-6), pp.573-580, May-June 2008. (pdf)
  43. M. Jamil, R. A. Arif, Y. K. Ee, H. Tong, J. B. Higgins, and N. Tansu, “MOCVD Epitaxy of InN Films on GaN Templates Grown on Sapphire and Silicon (111) Substrates,” in Physica Stat. Solidi (a), vol. 205 (7), pp. 1619-1624, July 2008. (pdf)
  44. (Invited Journal Paper) L. J. Mawst, J. Y. T. Huang, D. P. Xu, J. Y. Yeh, and G. Tsvid, T. F. Kuech, and N. Tansu, “MOCVD grown Dilute-Nitride Type-II Quantum Wells,” IEEE Selected Topics in J. Quantum Electron., vol. 14(4), pp. 979-991, July / August 2008. (pdf)
  45. G. Tsvid, J. Kirch, L. J. Mawst, M. Kanskar, J. Cai, R. A. Arif, N. Tansu, P. M. Smowton, and P. Blood, “Spontaneous Radiative Efficiency and Gain Characteristics of Strained Layer InGaAs / GaAs Quantum Well Laser,” IEEE J. Quantum Electron., vol. 44(8), pp. 732-739, August 2008. (pdf)
  46. H. P. Zhao, R. A. Arif, and N. Tansu, “Self Consistent Gain Analysis of Type-II ‘W’ InGaN-GaNAs Quantum Well Lasers,” J. Appl. Phys., vol. 104 (4), Art. 043104, August 2008. (pdf)
  47. M. Jamil, H. P. Zhao, J. Higgins, and N. Tansu, “Influence of Growth Temperature and V/III Ratio on the Optical Characteristics of Narrow-Band Gap (0.77 eV) InN Grown on GaN / Sapphire Using Pulsed MOVPE,” in J. Crys. Growth, vol. 310(23), pp. 4947-4953, November 2008. (pdf)
  48. (Cover Article) P. Kumnorkaew, Y. K. Ee, N. Tansu, and J. F. Gilchrist, “Deposition of Microsphere Monolayers for Fabrication of Microlens Arrays,” Langmuir, vol. 24 (21), pp. 12150-12157, November 2008. (pdf)
  49. S. K. Tripathy, G. Xu, X. Mu, Y. J. Ding, M. Jamil, R. A. Arif, N. Tansu, and J. B. Khurgin, “Phonon-Assisted Ultraviolet Anti-Stokes Photoluminescence from GaN Film Grown on Si (111) Substrate,” Appl. Phys. Lett., vol. 93, Art. 201107, November 2008. (pdf)
  50. M. Jamil, H. P. Zhao, J. Higgins, and N. Tansu, “MOVPE and Photoluminescence of Narrow Band Gap (0.77 eV) InN on GaN / Sapphire by Pulsed Growth Mode,” in Physica Stat. Solidi (a), vol. 205(12), pp. 2886-2891, December 2008. (pdf)
  51. H. P. Zhao, R. A. Arif, Y. K. Ee, and N. Tansu, “Self-Consistent Analysis of Strain-Compensated InGaN-AlGaN Quantum Wells for Lasers and Light Emitting Diodes,” IEEE J. Quantum Electron., vol. 45(1-2), pp. 66-78, January-February 2009. (pdf)
  52. Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Metalorganic Vapor Phase Epitaxy of III-Nitride Light-Emitting Diodes on Nano-Patterned AGOG Sapphire Substrate by Abbreviated Growth Mode,” IEEE J. Sel. Top. Quantum Electron., vol. 15 (4), pp. 1066-1072, July-August 2009. (pdf)
  53. H. P. Zhao, R. A. Arif, and N. Tansu, “Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500-540 nm,” IEEE J. Sel. Top. Quantum Electron., vol. 15 (4), pp. 1104-1114, July-August 2009. (pdf)
  54. Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, H. P. Zhao, J. F. Gilchrist, and N. Tansu, “Optimization of Light Extraction Efficiency of III-Nitride Light Emitting Diodes with Self-Assembled Colloidal-based Microlenses,” IEEE J. Sel. Top. Quantum Electron., vol. 15 (4), pp. 1218-1225, July-August 2009. (pdf)
  55. N. Tansu, E. F. Schubert, P. M. Smowton, and H. C. Kuo, “Introduction to the Issue on Solid-State Lighting,” IEEE J. Sel. Top. Quantum Electron., vol. 15 (4), pp. 1025-1027, July / August 2009. (pdf)
  56. Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, and N. Tansu, “Light Extraction Efficiency Enhancement of InGaN Quantum Wells Light-Emitting Diodes with Polydimethylsiloxane Concave Microstructures,” Optics Express, vol. 17 (16), pp. 13747-13757, August 2009. [Also featured in the Laser Focus World, August 2009] (pdf)
  57. H. P. Zhao, G. S. Huang, G. Y. Liu, X. H. Li, J. D. Poplawsky, S. Tafon Penn, V. Dierolf, and N. Tansu, “Growths of Staggered InGaN Quantum Wells Light-Emitting Diodes Emitting at 520-525 nm Employing Graded Growth-Temperature Profile,” Appl. Phys. Lett., vol. 95(6), Art. 061104, August 2009. [Also listed in Top 20 Most Downloaded Articles in Applied Physics Letters, August 2009] (pdf)
  58. (Invited Journal Paper) H. P. Zhao, G. Y. Liu, X. H. Li, R. A. Arif, G. S. Huang, J. D. Poplawsky, S. Tafon Penn, V. Dierolf, and N. Tansu, “Design and Characteristics of Staggered InGaN Quantum Well Light-Emitting Diodes in the Green Spectral Regimes,” IET Optoelectronics, vol. 3(6), pp. 283-295, December 2009. (pdf)
  59. G. Xu, Y. J. Ding, H. P. Zhao, M. Jamil, G. Y. Liu, N. Tansu, I. B. Zotova, C. E. Stutz, D. E. Diggs, N. Fernelius, F. K. Hopkins, C. S. Gallinat, G. Koblmüller, and J. S. Speck, “THz Generation from InN Films due to Destructive Interference between Optical Rectification and Photocurrent Surge,” Semiconductor Science and Technology, vol. 25 (1), Art. 015004, January 2010. (pdf)
  60. Y. K. Ee, X. H. Li, J. E. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Abbreviated MOVPE Nucleation of III-Nitride Light-Emitting Diodes on Nano-Patterned Sapphire,” J. Crys. Growth, vol. 312 (8), pp. 1311-1315, April 2010. (pdf)
  61. (Invited Review Article) N. Tansu, H. P. Zhao, G. Y. Liu, X. H. Li, J. Zhang, H. Tong, and Y. K. Ee, “III-Nitride Photonics”, IEEE Photonics Journal, vol. 2 (2), pp. 241-248, April 2010. (pdf)
  62. H. P. Zhao, and N. Tansu, “Optical Gain Characteristics of Staggered InGaN Quantum Well Lasers,” J. Appl. Phys., vol. 107, Art. 113110, June 2010. (pdf)
  63. G. Sun, Y. J. Ding, G. Y. Liu, G. S. Huang, H. P. Zhao, N. Tansu, and J. B. Khurgin, “Photoluminescence Emission in Deep Ultraviolet Region from GaN/AlN Asymmetric-Coupled Quantum Wells,” Appl. Phys. Lett., vol. 97, Art. 021904, July 2010. (pdf)
  64. J. Zhang, H. P. Zhao, and N. Tansu, “Effect of Crystal-Field Split-Off Hole and Heavy-Hole Bands Crossover on Gain Characteristics of High Al-Content AlGaN Quantum Well Lasers,” Appl. Phys. Lett. vol. 97, Art. 111105, September 2010. (pdf)
  65. H. Tong, J. Zhang, G. Y. Liu, J. Herbsommer, G. S. Huang, and N. Tansu, “Thermoelectric Properties of Lattice-Matched AlInN Alloy Grown by Metalorganic Chemical Vapor Deposition,” Appl. Phys. Lett., vol. 97, Art. 112105, September 2010. (pdf)
  66. H. P. Zhao, G. Y. Liu, and N. Tansu, “Analysis of InGaN-Delta-InN Quantum Wells for Light-Emitting Diodes,” Appl. Phys. Lett., vol. 97, Art. 131114, September 2010. (pdf)
  67. H. P. Zhao, G. Y. Liu, R. A. Arif, and N. Tansu, “Current Injection Efficiency Quenching Leading to Efficiency Droop in InGaN Quantum Well Light-Emitting Diodes,” Solid-State Electronics, vol. 54(10), pp. 1119–1124, October 2010. (pdf)
  68. G. Sun, G. Xu, Y. J. Ding, H. P. Zhao, G. Y. Liu, J. Zhang, and N. Tansu, “Efficient Terahertz Generation from Multiple InGaN / GaN Quantum Wells,” IEEE J. Sel. Top. Quantum Electron., vol. 17(1), pp. 48-53, January-February 2011. (pdf)
  69. J. Zhang, H. Tong, G. Y. Liu, J. A. Herbsommer, G. S. Huang, and N. Tansu, “Characterizations of Seebeck Coefficients and Thermoelectric Figures of Merit for AlInN Alloys with Various In-Contents,” J. Appl. Phys., vol. 109(5), Art. 053706, March 2011. (pdf)
  70. G. Y. Liu, H. P. Zhao, J. Zhang, J. H. Park, L. J. Mawst, and N. Tansu, “Selective Area Epitaxy of Ultra-High Density InGaN Quantum Dots by Diblock Copolymer,” Nanoscale Res. Lett., vol. 6, Art. 342, April 2011. (pdf)
  71. H. P. Zhao, J. Zhang, G. Y. Liu, and N. Tansu, “Surface Plasmon Dispersion Engineering via Double-Metallic Au / Ag Layers for III-Nitride Based Light-Emitting Diodes,” Appl. Phys. Lett., vol. 98, Art. 151115, April 2011. (pdf)
  72. J. Zhang, H. P. Zhao, and N. Tansu, “Large Optical Gain AlGaN-Delta-GaN Quantum Wells Laser Active Regions in Mid- and Deep-Ultraviolet Spectral Regimes,” Appl. Phys. Lett., vol. 98, Art. 171111, April 2011. (pdf)
  73. J. W. Ferguson, P. Blood, P. M. Smowton, H. Bae, T. Sarmiento, J. S. Harris, N. Tansu, and L. J. Mawst, “Optical Gain in GaInNAs and GaInNAsSb Quantum Wells,” IEEE J. Quantum Electron., vol. 47 (6), pp. 870-877, June 2011. (pdf)
  74. X. H. Li, R. B. Song, Y. K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes with Colloidal Microlens Arrays with Various Aspect Ratios,” IEEE Photonics Journal, vol. 3 (3), pp. 489-499, June 2011. DOI: 10.1109/JPHOT.2011.2150745 (pdf)
  75. (Invited Journal Paper) H. P. Zhao, G. Y. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for High Internal Quantum Efficiency Green InGaN Light-Emitting Diodes with Large Overlap Quantum Wells,” Optics Express, vol. 19 (S4), pp. A991-A1007, July 2011. (pdf)
  76. G. Sun, G. B. Xu, Y. J. Ding, H. P. Zhao, G. Y. Liu, J. Zhang, and N. Tansu, “Investigation of Fast and Slow Decays in InGaN/GaN Quantum Wells,” Appl. Phys. Lett., vol. 99, Art. 081104, August 2011. (pdf)
  77. J. Zhang, S. Kutlu, G.Y.Liu, and N. Tansu, “High-Temperature Characteristics of Seebeck Coefficients for AlInN Alloys Grown by Metalorganic Vapor Phase Epitaxy,” J. Appl. Phys., vol. 110, Art. 043710, August 2011. (pdf)
  78. W. Cao, J. M. Biser, Y. K. Ee, X. H. Li, N. Tansu, R. P. Vinci, and H. M. Chan, “Dislocation Structure of GaN Films Grown on Planar and Nano-Patterned Sapphire,” J. Appl. Phys., vol. 110, Art. 053505, September 2011. (pdf)
  79. J. Zhang, and N. Tansu, “Improvement in Spontaneous Emission Rates for InGaN Quantum Wells on Ternary InGaN Substrate for Light-Emitting Diodes,” J. Appl. Phys., vol. 110 (11), Art. 113110, December 2011. (pdf)
  80. G. Y. Liu, J. Zhang, X. H. Li, G. S. Huang, T. Paskova, K. R. Evans, H. P. Zhao, and N. Tansu, “Metalorganic Vapor Phase Epitaxy and Characterizations of Nearly-Lattice-Matched AlInN Alloys on GaN / Sapphire Templates and Free-Standing GaN Substrates,” J. Crys. Growth, vol. 340 (1), pp. 66-73, February 2012. (pdf)
  81. (Frontispiece Cover Article) W. H. Koo, W. Youn, P. F. Zhu, X. H. Li, N. Tansu, and F. So, “Light extraction of organic light emitting diodes using defective hexagonal-close-packed array,” Advanced Functional Materials, vol. 22 (16), pp. 3454-3459, August 2012. (pdf)
  82. L. F. Xu, D. Patel, C. S. Menoni, J. Y. Yeh, L. J. Mawst, and N. Tansu, “Experimental Evidence of the Impact of Nitrogen on Carrier Capture and Escape Times in InGaAsN / GaAs Single Quantum Well”, IEEE Photonics Journal, vol. 4, no. 6, pp. 2262-2271, December 2012. DOI: 10.1109/JPHOT.2012.2230251 (pdf)
  83. L. F. Xu, D. Patel, C. S. Menoni, J. M. Pikal, J. Y. Yeh, J. Y. T. Huang, L. J. Mawst, and N. Tansu, “Carrier Recombination Dynamics Investigations of Strain Compensated InGaAsN Quantum Wells”, IEEE Photonics Journal, vol. 4, no. 6, pp. 2382-2389, December 2012. DOI: 10.1109/JPHOT.2012.2233465 (pdf)
  84. G. Xu, G. Sun, Y. J. Ding, H. P. Zhao, G. Y. Liu, J. Zhang, and N. Tansu, “Investigation of Large Stark Shifts in InGaN / GaN Multiple Quantum Wells”, J. Appl. Phys., vol 113, Art. 033104, January 2013. DOI: 10.1063/1.4775605 (pdf)
  85. G. Sun, R. Chen, Y. Ding, H. Zhao, G. Liu, J. Zhang, and N. Tansu, "Strikingly Different Behaviors of Photoluminescence and Terahertz Generation in InGaN/GaN Quantum Wells", IEEE J. Sel. Top. Quantum Electron., vol. 19, no. 1, Art. 8400106, January / February 2013. DOI: 10.1109/JSTQE.2012.2218093 (pdf)
  86. J. Zhang, and N. Tansu, “Optical Gain and Laser Characteristics of InGaN Quantum Wells on Ternary InGaN Substrates”, IEEE Photonics Journal, vol. 5, no. 2, Art. 2600111, April 2013. DOI: 10.1109/JPHOT.2013.2247587 (pdf)
  87. J. Zhang, and N. Tansu, “Engineering of AlGaN-Delta-GaN Quantum Wells Gain Media for Mid- and Deep-Ultraviolet Lasers”, IEEE Photonics Journal, vol. 5, no. 2, Art. 2600209, April 2013. DOI: 10.1109/JPHOT.2013.2248705 (pdf)
  88. N. Tansu, F. So, and Q. B. Pei, “Guest Editorial – Recent Advances in Solid State Lighting,” Journal of Display Technology, vol. 9, no. 4, pp. 187-189, April 2013. DOI: 10.1109/JDT.2013.2252962 (pdf)
  89. H. P. Zhao, X. Jiao, and N. Tansu, “Analysis of Interdiffused InGaN Quantum Wells for Visible Light-Emitting Diodes”, Journal of Display Technology, vol. 9, no. 4, pp. 199-206, April 2013. DOI: 10.1109/JDT.2013.2250480 (pdf)
  90. H. P. Zhao, G. Y. Liu, J. Zhang, R. A. Arif, and N. Tansu, “Analysis of Internal Quantum Efficiency and Current Injection Efficiency in Nitride Light-Emitting Diodes”, Journal of Display Technology, vol. 9, no. 4, pp. 212-225, April 2013. DOI: 10.1109/JDT.2013.2250252 (pdf)
  91. C. K. Tan, J. Zhang, X. H. Li, G. Y. Liu, B. O. Tayo, and N. Tansu, “First-Principle Electronic Properties of Dilute-As GaNAs Alloy for Visible Light Emitters”, Journal of Display Technology, vol. 9, no. 4, pp. 272-279, April 2013. DOI: 10.1109/JDT.2013.2248342 (pdf)
  92. G. Y. Liu, J. Zhang, C. K. Tan, and N. Tansu, “Efficiency-Droop Suppression by Using Large-Bandgap AlGaInN Thin Barrier Layers in InGaN Quantum Wells Light-Emitting Diodes”, IEEE Photonics Journal, vol. 5, no. 2, Art. 2201011, April 2013. DOI: 10.1109/JPHOT.2013.2255028 (pdf)
  93. P. F. Zhu, G. Y. Liu, J. Zhang, and N. Tansu, “FDTD Analysis on Extraction Efficiency of GaN Light-Emitting Diodes with Microsphere Arrays”, Journal of Display Technology, vol. 9, no. 5, pp. 317-323, May 2013. DOI: 10.1109/JDT.2013.2250253 (pdf)
  94. X. H. Li, P. F. Zhu, G. Y. Liu, J. Zhang, R. B. Song, Y. K. Ee, P. Kumnorkaew, and J. F. Gilchrist, and N. Tansu, “Light Extraction Efficiency Enhancement of III-Nitride Light-Emitting Diodes by using 2-D Close-Packed TiO2 Microsphere Arrays”, Journal of Display Technology, vol. 9, no. 5, pp. 324-332, May 2013. DOI: 10.1109/JDT.2013.2246541 (pdf)
  95. P. P. Banerjee, D. R. Evans, W. Lee, V. Y. Reshetnyak, and N. Tansu, “Hybrid Organic-Inorganic Materials for Photonic Applications,” Optical Materials Express, Vol. 3, no. 8, pp.1149-1151, July 2013. (Joint Issue with Applied Optics) (pdf)
  96. P. P. Banerjee, D. R. Evans, W. Lee, V. Y. Reshetnyak, and N. Tansu, “Hybrid Organic-Inorganic Materials for Novel Photonic Applications,” Applied Optics, vol. 52, no. 22, pp. HM1-HM3, July 2013. (Joint Issue with Optical Materials Express) (pdf)
  97. N. Tansu, “Photonics – Advances in Fundamental Sciences and Engineering Technologies of Light,” Photonics, vol. 1, no.1, pp. 1-8, March 2014. DOI: 10.3390/photonics1010001 (pdf)
  98. More than 10 additional refereed journal papers submitted and under review for publication

Refereed Conference Publications/Proceedings

  1. N. Tansu, S. Rusli, D. Zhou, and L. J. Mawst, "Compressively Strained InGaAsP-Active (λ=0.78-0.85-μm) regions for VCSELs," Proc. of 12th IEEE Laser and Electro-Optics Society Meeting 1999, paper WA5, pp. 397-398, San Francisco, CA, Nov 1999.
  2. N. Tansu, and L. J. Mawst, “Compressively-Strained InGaAsP-Active (λ=0.78-0.85-μm) regions VCSELs,” Proc. of the 13th IEEE Laser and Electro-Optics Society Meeting 2000, paper ThF2, pp. 724-725, Rio Grande, Puerto Rico, Nov. 2000.
  3. N. Tansu, and L. J. Mawst, "Strain Compensated InGaAs / GaAsP / InGaP (λ=1.17 μm) Diode Lasers on GaAs," Proc. SPIE Photonics West 2001, Novel In-Plane Semiconductor Lasers, vol. 4287, pp.188-194, San Jose, CA, Jan 2001.
  4. N. Tansu, and L. J. Mawst, “Lasing Characteristics of the MOCVD-grown Strain-Compensated InGaAs(N) Quantum Well (λ=1.17-1.31-μm) Diode Lasers,” Narrow Band-Gap Nitride Workshop, Singapore, Republic of Singapore, October 2001. (Note: cancel the trip due to the unfortunate September 11th 2001 tragedy).
  5. N. Tansu, Y. L. Chang, T. Takeuchi, D. P. Bour, S. W. Corzine, M. R. T. Tan, and L. J. Mawst, “Lasing Characteristics and Temperature Analysis of Strain compensated InGaAs(N)-GaAsP-GaAs (λ 1.17 μm) Quantum Well Lasers,” Proc. of the 14th IEEE Laser and Electro-Optics Society Meeting 2001, paper TuY6, pp.336-337, San Diego, CA, Nov. 2001.
  6. D. Zhou, T. W. Lee, N. Tansu, S. C. Hagness, and L. J. Mawst, “Large Spot Size Narrow Waveguide VCSELs,” Proc. of the 14th IEEE Laser and Electro-Optics Society (LEOS) Annual Meeting 2001, paper WI5, pp. 469-470, San Diego, CA, Nov. 2001.
  7. N. Tansu, and L. J. Mawst, “Analysis of the Temperature Characteristics of Highly Strained InGaAs(N) (λ=1.17μm) Quantum Well Lasers,” Proc. of the SPIE Photonics West 2002, Physics and Simulation of Optoelectronics Devices X, vol. 4646, pp. 302-312, San Jose, CA, Jan 2002.
  8. N. Tansu, and L. J. Mawst, “Temperature Sensitivity Analysis of High Performance InGaAs(N) (λ=1.19-1.3 μm) Quantum Well Lasers,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2002, Long Beach, CA, Paper CTuQ4, May 2002.
  9. N. Tansu, and L. J. Mawst, “Low-Threshold-Current MOCVD-InGaAsN Quantum Well Lasers,” IEEE Semiconductor Lasers Workshop 2002, Long Beach, CA, May 2002.
  10. N. Tansu, N. J. Kirsch, and L. J. Mawst, “MOCVD Growth of Strain Compensated InGaAsN Quantum Well Lasers,” Proc. of the 11th Int. Conf. – Metalorganic Vapor Phase Epitaxy (IC-MOVPE XI) 2002, Berlin, Germany, Paper Mon-F4, June 2002.
  11. L. J. Mawst, and N. Tansu, “High Performance MOCVD-Grown InGaAsN Quantum Well Lasers,” DARPA Long-Wavelength on GaAs Workshop 2002, Napa Valley, CA, June 2002.
  12. N. Tansu, and L. J. Mawst, “High Performance 1300-nm Dilute-Nitride Quantum Well Lasers by MOCVD,” Proc. of the IEEE 18th - Int. Semiconductor Laser Conference (ISLC), Garmisch, Germany, Paper TuA1, pp.33-34, Sept-Oct 2002.
  13. (Invited Conference Paper) L. J. Mawst, N. Tansu, and J. Y. Yeh, "MOCVD-Grown InGaAsN Quantum-Well Lasers," Proc. of the SPIE Photonics West 2003, Novel In-Plane Semiconductor Lasers 2003, vol. 4995, Paper 4995-09, San Jose, CA, Jan 2003.
  14. J. Y. Yeh, N. Tansu, and L. J. Mawst, “Growth InGaAsN-InGaAsP Quantum-Well Lasers by MOCVD,” Proc. of the Indium Phosphide and Related Materials (IPRM) 2003, Santa Barbara, CA, Paper WA2.3, pp. 269-272, May 2003.
  15. N. Tansu, J. Y. Yeh, and L. J. Mawst, “Carrier Confinement in 1300-nm InGaAsN Quantum-Well Lasers,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2003, paper CTuH2, Baltimore, MD, June 2003.
  16. N. Tansu, L. J. Mawst, I. Vurgaftmann, and J. R. Meyer, “1550-nm GaAsSb-(In)GaAsN Type-II Quantum Wells Lasers,” IEEE Semiconductor Lasers Workshop 2003, Baltimore, MD, June 2003.
  17. N. Tansu, Jeng-Ya Yeh, and L. J. Mawst, “Low Threshold-Current-Density 1382-nm InGaAsN Quantum-Wells Lasers by Metalorganic Chemical Vapor Deposition,” IEEE Semiconductor Lasers Workshop 2003, Baltimore, MD, June 2003.
  18. (Late News / Post-Deadline Paper) N. Tansu, J. Y. Yeh, and L. J. Mawst, “High Performance 1360-1382 nm InGaAsN Quantum Well Lasers by Metalorganic Chemical Vapor Deposition,” Proc. of the 11th Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE) 2003, Keystone, Colorado, July 2003.
  19. (Invited Conference Paper) N. Tansu, and L. J. Mawst, “High-Performance Dilute-Nitride Telecommunication Lasers,” Proc. of the 7th Joint Conference on Information Sciences 2003, the 2nd Symposium on Photonics, Networking, and Computing 2003, Cary, North Carolina, USA, September 2003.
  20. N. Tansu, J. Y. Yeh, and L. J. Mawst, “High-Performance InGaAsN Quantum Well Lasers for Optical Communication,” Proc. of the MRS 8th Wide-Bandgap III-Nitride Workshop 2003, Richmond, Virginia, USA, September-October 2003.
  21. N. Tansu, L. J. Mawst, I. Vurgaftman, and J. Meyer, “GaAsSb-(In)GaAsN Type-II Quantum-Wells Lasers,” Proc. of the 16th IEEE Laser and Electro-Optics Society (LEOS) Annual Meeting 2003, paper MD2, pp. 37-38, Tuczon, AZ, Oct-Nov 2003.
  22. J. Y. Yeh, N. Tansu, and L. J. Mawst, “Temperature Sensitivity of 1360-nm InGaAsN Quantum Well Lasers,” Proc. of the 16th IEEE Laser and Electro-Optics Society (LEOS) Annual Meeting 2003, paper MD4, pp. 27-28, Tuczon, AZ, October-November 2003.
  23. N. Tansu, J. Y. Yeh, and L. J. Mawst, “High-Performance InGaAsN Quantum Well Broad-Area and Single-Mode Ridge Lasers for Telecommunication,” Proc. of the MRS Spring Meeting 2004: Symposium L: New Materials for MicroPhotonics, San Francisco, CA, USA, April 2004.
  24. L. Shterengas, G. Belenky, J. Y. Yeh, L. J. Mawst, and N. Tansu, “Linewidth Enhancement Factors of InGaAs and InGaAsN Single Quantum-Well Diode Lasers,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2004, paper CTuJ4, San Francisco, CA, May 2004.
  25. O. Anton, D. Patel, C. S. Menoni, J. Y. Yeh, L. J. Mawst, J. M. Pikal, and N. Tansu, “Effect of Nitrogen Concentration on Carrier Lifetime in GaAs-Based Long Wavelength (λ=1.2-1.3μm) Lasers,”, Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2004, paper CTuJ1, San Francisco, CA, May 2004.
  26. I. Vurgaftman, J. R. Meyer, L. J. Mawst, and N. Tansu, “Dilute-Nitride Mid-Infrared Type-II ‘W’ Quantum-Well Lasers on InP Substrates”, Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2004, paper CTuJ6, San Francisco, CA, May 2004.
  27. D. J. Palmer, P. M. Smowton, P. Blood, J. Y. Yeh, L. J. Mawst, and N. Tansu, “The Effect of Nitrogen in InGaAsN Quantum Well Lasers”, Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2004, paper CTuJ2, San Francisco, CA, May 2004.
  28. J. Y. Yeh, L. J. Mawst, and N. Tansu, “Characteristics of Long Wavelength (λ=1.4-μm) InGaAsN Quantum Well Lasers,” Proc. of the 12th Int. Conf. – Metalorganic Vapor Phase Epitaxy (IC-MOVPE XII) 2004, Lahaina, Hawaii, USA, May-June 2004.
  29. M. Y. Tsai, H. C. Kuo, Y. H. Chang, Y. A. Chang, S. C. Wang, N. Tansu, J. Y. Yeh, and L. J. Mawst, “Temperature Dependent Photoluminescence of Highly Strained InGaAsN/GaAs Quantum Well (λ=1.20-1.45 μm) with GaAsP Strain-Compensated Layer”, Proc. of the Taiwan International Conference on Nano Science and Technology (TICON) 2004, Hsinchu, Taiwan, June-July 2004.
  30. D. J. Palmer, P. M. Smowton, P. Blood, J. Y. Yeh, L. J. Mawst, and N. Tansu, “The Effect of Nitrogen in InGaAsN Quantum Well Lasers”, Proc. of the IOP Photon04 2004: Semiconductor Optoelectronics, Glasgow, Scotland, UK, September 2004.
  31. Y. H. Chang, H. C. Kuo, Y. A. Chang, M. Y. Tsai, S. C. Wang, N. Tansu, J. Y. Yeh, and L. J. Mawst, “Temperature Dependent Photoluminescence of Highly Strained InGaAsN/GaAs Quantum Well (λ=1.20-1.45 μm) with GaAsP Strain-Compensated Layer”, Proc. of the International Conference on Solid State Devices and Materials (SSDM) 2004, Tokyo, Japan, September 2004.
  32. P. M. Smowton, D. J. Palmer, P. Blood, J. Y. Yeh, L. J. Mawst, and N. Tansu, “The Effect of Nitrogen in InGaAsN Quantum Well Lasers”, Proc. of the European Semiconductor Laser Workshop 2004, Sarohus, Saro, Sweden, September 2004.
  33. O. Anton, C. S. Menoni, J. Y. Yeh, T. T. Van Roy, L. J. Mawst, and N. Tansu, “The 3dB Bandwidth of Strain-Compensated Dilute-Nitride Quantum-Well Lasers,” Proc. of the 17th IEEE Laser and Electro-Optics Society (LEOS) Annual Meeting 2004, paper WAA5, pp. 697-698, Puerto Rico, October 2004.
  34. J. Y. Yeh, L. J. Mawst, and N. Tansu, “Carrier Transport and Current Injection Efficiency of InGaAsN Quantum-Well Lasers,” Proc. of the 17th IEEE Laser and Electro-Optics Society (LEOS) Annual Meeting 2004, paper WAA3, pp.693-694, Puerto Rico, October 2004.
  35. R. A. Arif, and N. Tansu, “Interdiffused InGaAsSbN Quantum Wells on GaAs for 1300-1550 nm Lasers,” Proc. of the SPIE Photonics West 2005, Physics and Simulation of Optoelectronics Devices XIII, vol. 5722, San Jose, CA, Jan 2005.
  36. (Invited Conference Paper) J. R. Meyer, I. Vurgaftman, N. Tansu, and L. J. Mawst, “Dilute-Nitride Type-II ‘W’ Quantum Well Lasers for the Near-IR and Mid-IR,” Proc. of the SPIE Photonics West 2005, Novel In-Plane Semiconductor Lasers 2005, vol. 5738, San Jose, CA, Jan 2005.
  37. (Invited Conference Paper) L. J. Mawst, J. Y. Yeh, T. T. Van Roy, and N. Tansu, “Characteristics of MOCVD-Grown Dilute-Nitride Quantum Well Lasers,” Proc. of the SPIE Photonics West 2005, Novel In-Plane Semiconductor Lasers 2005, vol. 5738, San Jose, CA, Jan 2005.
  38. D. J. Palmer, P. M. Smowton, P. Blood, J. Y. Yeh, L. J. Mawst, and N. Tansu, “The Effect of Temperature on the Gain and Efficiency of InGaAs and InGaAsN Quantum Well Laser Structures”, Proc. of the Semiconductor and Integrated Optoelectronics (SIOE) 2005, Cardiff, Wales, UK, March 2005.
  39. (Invited Conference Paper) L. J. Mawst, J. Y. Yeh, and N. Tansu, “Characteristics of Dilute-Nitride Quantum Well Lasers”, Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics 2005, paper CMF5, Baltimore, MD, May 2005.
  40. O. Anton, D. Patel, C. S. Menoni, J. Y. Yeh, L. J. Mawst, J. M. Pikal, and N. Tansu, “Effect of nitrogen content and temperature on the f3dB of 1.3µm Dilute-Nitride SQW Lasers,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2005, paper CMF3, Baltimore, MD, May 2005.
  41. L. Xu, D. Patel, G. Vaschenko, C.S. Menoni, J. Y. Yeh, T. T. Van Roy, L. J. Mawst, and N. Tansu, “Investigation of the Carrier Dynamics of Strain Compensated InGaAsN Quantum Wells,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2005, paper CFE4, Baltimore, MD, May 2005.
  42. D. J. Palmer, P. M. Smowton, P. Blood, J. Y. Yeh, L. J. Mawst, and N. Tansu, “The Effect of Temperature on the Efficiency of InGaAs and InGaAsN Quantum Well Laser Structures”, Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2005, paper CMF6, Baltimore, MD, May 2005.
  43. R. A. Arif, and N. Tansu, “Interdiffused SbN-Based Quantum Wells on GaAs for 1300-1550 nm Lasers: Theory and Experiments,” IEEE Semiconductor Lasers Workshop 2005, Baltimore, MD, May 2005.
  44. J. Y. Yeh, A. A. Khandekar, B. E. Hawkins, T. F. Kuech, L. J. Mawst, J. R. Meyer, I. Vurgaftman, and N. Tansu, “Long Wavelength Emission from InGaAsN/GaAsSb Type-II ‘W’ Quantum Wells,” Proc. of the 12th Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE) 2005, Big Sky Resort, Montana, July 2005.
  45. R. A. Arif, N. H. Kim, L. J. Mawst, and N. Tansu, “Interdiffused InGaAsP Quantum Dots Lasers on GaAs by Metalorganic Chemical Vapor Deposition,” Proc. of the MRS Fall Meeting 2005: Symposium EE: Progress in Semiconductor Materials V—Novel Materials and Electronic and Optoelectronic Applications, Boston, MA, USA, November-December 2005.
  46. R. A. Arif, and N. Tansu, “Interdiffused SbN-Based Quantum Wells on GaAs for 1300-1550 nm Lasers,” Proc. of the MRS Fall Meeting 2005: Symposium EE: Progress in Semiconductor Materials V—Novel Materials and Electronic and Optoelectronic Applications, Boston, MA, USA, November-December 2005.
  47. Z. Jin, and N. Tansu, “Novel Approach for Efficient Mid-Infrared Coherent Emitters Based on Continuously-Phase-Matched ‘W’ Optical Waveguide,” Proc. of the SPIE Photonics West 2006, Physics and Simulation of Optoelectronics Devices XIV, vol. 6115, San Jose, CA, Jan 2006.
  48. R. A. Arif, Y. K. Ee, and N. Tansu, “Type-II 450-550 nm InGaN-GaNAs Quantum Well Lasers and Light Emitters Active Region on GaN,” Proc. of the SPIE Photonics West 2006, Physics and Simulation of Optoelectronics Devices XIV, vol. 6115, Art. 61150Y1-11, San Jose, CA, Jan 2006.
  49. R. A. Arif, Y. K. Ee, and N. Tansu, “Polarization Field Engineering with Type-II InGaN-GaNAs Quantum Well for Improved Nitride Gain Media at 420-550 nm,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2006, paper CTuX1, Long Beach, CA, May 2006.
  50. Z. Jin, R. S. Tummidi, Y. P. Gupta, D. M. Schindler, and N. Tansu, “Quasi-Guided-Optical-Waveguide VCSELs for Single-Mode High-Power Applications,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2006, paper CWP7, Long Beach, CA, May 2006.
  51. L. J. Mawst, J. Y. Yeh, D. Xu, J. H. Park, Y. Huang, A. Khandekar, T. F. Kuech, N. Tansu, I. Vurgaftman, and J. R. Meyer, “InGaAsN/GaAsSb/GaAs(P) type-II ‘W’ Quantum Well Lasers,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2006, paper CMBB6, Long Beach, CA, May 2006.
  52. N. Tansu, J. Y. Yeh, and L. J. Mawst, “Effect of Strain on the Nitrogen Incorporation in InGaAsN Quantum Wells Grown on GaAs and InP Substrates by Metalorganic Vapor Phase Epitaxy,” Proc. of the TMS Electronics Material Conference (EMC) 2006, State College, PA, June 2006.
  53. R. A. Arif, Y. K. Ee, and N. Tansu, “Nitride-Based Type-II InGaN-GaNAs ‘W’ Quantum Well Gain Media at 420-550 nm,” Proc. of the TMS Electronics Material Conference (EMC) 2006, State College, PA, June 2006.
  54. (Invited Conference Paper) T. F. Kuech, A. A. Khandekar, J. Y. Yeh, L. J. Mawst, J. R. Meyer, I. Vurgaftman, and N. Tansu, “Chemical, Thermodynamic and Strain Effects on the Alloy Composition in GaAsSb Films Grown via Metalorganic Vapor Phase Epitaxy,” Proc. of the Romanian Conference on Advanced Materials (ROCAM) 2006, Bucharest-Magurele, Romania, September 2006.
  55. L. Xu, D. Patel, C. S. Menoni, J. Y. Yeh, J. Y. T. Huang, L. J. Mawst, and N. Tansu, “Exciton binding energy and electron effective-mass in strain compensated InGaAsN/GaAs single quantum well,” Proc. of the 19th IEEE Laser and Electro-Optics Society (LEOS) Annual Meeting 2006, paper ME5, pp. 58-59, Montreal, Canada, October-November 2006.
  56. H. Li, J. T. Perkins, H. M. Chan, R. P. Vinci, Y. K. Ee, R. A. Arif, R. S. Tummidi, J. Li, and N. Tansu, “Nanopatterning of Sapphire for GaN Heteroepitaxy by Metalorganic Chemical Vapor Deposition,” Proc. of the MRS Fall Meeting 2006: Symposium I: Advances in III-V Nitride Semiconductor Materials and Devices, Boston, MA, USA, November-December 2006.
  57. R. A. Arif, R. S. Tummidi, Y. K. Ee, and N. Tansu, “Design Analysis of Lattice-Matched AlInGaN-GaN Quantum Wells for Optimized Intersubband Absorption in the Mid-IR Regime,” Proc. of the SPIE Photonics West 2007, Physics and Simulation of Optoelectronics Devices XV, vol. 6468, Art. 6468031-9, San Jose, CA, Jan 2007.
  58. Y. K. Ee, Y. P. Gupta, R. A. Arif, and N. Tansu, “Quantum 3-D Finite-Difference-Time-Domain (FDTD) Analysis of InGaAs-GaAsP and InN-GaN Quantum Dots Nanostructures,” Proc. of the SPIE Photonics West 2007, Physics and Simulation of Optoelectronics Devices XV, vol. 6468, Art. 64681D1-11, San Jose, CA, Jan 2007.
  59. L. Xu, D. Patel, C. S. Menoni, J. Y. Yeh, L. J. Mawst, and N. Tansu, “Exciton binding energy and electron effective-mass in strain compensated InGaAsN/GaAs single Quantum Well,” Proc. of the American Physical Society (APS) Annual March Meeting 2007: Session X41: Semiconductors: Electronic and Optical Properties, Denver, Colorado, March 2007.
  60. M. Jamil, Y. K. Ee, R. A. Arif, H. Tong, and N. Tansu, “Study of Nucleation and Growth Modes of InN films by MOCVD on Sapphire Substrate for Photovoltaic Applications,” Proc. of the MRS Spring 2007: Symposium Y: Thin-Film Compound Semiconductor Photovoltaics, San Francisco, CA, USA, April 2007.
  61. R. A. Arif, Y. K. Ee, and N. Tansu, “Enhancement of Radiative Efficiency of Nitride-Based LEDs via Staggered InGaN Quantum Wells Emitting at 420-500 nm,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2007, paper CMF5, Baltimore, MD, May 2007.
  62. Y. K. Ee, P. Kumnorkaew, R. A. Arif, J. F. Gilchrist, and N. Tansu, “Enhancement of Light Extraction Efficiency of InGaN Quantum Wells LEDs Using SiO2 Microspheres,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2007, paper CTuI3, Baltimore, MD, May 2007.
  63. Y. K. Ee, R. A. Arif, M. Jamil, and N. Tansu, “MOCVD Epitaxy and Optical Properties of Self-Assembled InGaN Quantum Dots via Stranski-Kastranow Growth Mode Emitting at 520-nm,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2007, paper CME3, Baltimore, MD, May 2007.
  64. (Invited Conference Paper) R. A. Arif, Y. K. Ee, H. P. Zhao, M. Jamil, and N. Tansu, “Nanostructure Engineering of InGaN-Based Active Regions for Improved III-Nitride Gain Media Emitting at 420-650 nm,” Proc. of the European MRS (E-MRS) Spring Meeting 2007: Symposium F: Novel Gain Materials and Devices Based on III-N-V Compounds, Strasbourg, France, May-June 2007.
  65. P. Kumnorkaew, Y. K. Ee, N. Tansu, and J. F. Gilchrist, “Deposition of Microsphere Monolayers for Microlens Arrays,” Proc. of the 81st American Chemical Society (ACS) Colloid and Surface Science Symposium (ACS Colloidal) 2007, Newark, DE, June 2007.
  66. M. Jamil, R. A. Arif, Y. K. Ee, H. Tong, J. B. Higgins, and N. Tansu, “MOCVD Epitaxy of InN Films on GaN Templates Grown on Sapphire and Silicon (111) Substrates,” Proc. of the 13th Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE) 2007, Salt Lake City, UT, August 2007.
  67. Y. K. Ee, H. P. Zhao, R. A. Arif, M. Jamil, and N. Tansu, “Self-Assembled InGaN Quantum Dots on GaN Grown by Metalorganic Vapor Phase Epitaxy ,” Proc. of the 13th Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE) 2007, Salt Lake City, UT, August 2007.
  68. H. P. Zhao, R. A. Arif, Y. K. Ee, and N. Tansu, “Optical Gain Analysis of Strain Compensated InGaN-AlGaN Quantum Well Active Regions for Lasers Emitting at 420-520 nm,” Proc. of the 7th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2007), paper WB3, pp. 69-70, Newark, DE, September 2007.
  69. E. Readinger, G. Chern, H. Shen, M. Wraback, R. A. Arif, Y. K. Ee, and N. Tansu, “Optical and Physical Properties of In-faced InN/InGaN Multi-Quantum Wells Grown on GaN Templates by Plasma-Assisted Molecular Beam Epitaxy,” Proc. of the North America Molecular Beam Epitaxy (NAMBE) Conference 2007, Alburqueque, NM, September 2007.
  70. Y. K. Ee, R. A. Arif, N. Tansu, H. Li, H. M. Chan, R. P. Vinci, P. Capek, N. K. Jha, and V. Dierolf, “Improved Photoluminescence of InGaN Quantum Wells Grown on Nano-Patterned AGOG Sapphire Substrate by Metalorganic Vapor Phase Epitaxy,” Proc. of the 20th IEEE Laser and Electro-Optics Society (LEOS) Annual Meeting 2007, paper ThZ3, pp. 902-903, Lake Buena Vista, FL, October 2007.
  71. H. P. Zhao, R. A. Arif, Y. K. Ee, and N. Tansu, “Optical Gain Analysis of Staggered InGaN Quantum Wells Active Regions for Lasers Emitting at 420-500 nm,” Proc. of the 20th IEEE Laser and Electro-Optics Society (LEOS) Annual Meeting 2007, paper TuZ2, pp. 376 – 377, Lake Buena Vista, FL, October 2007.
  72. G. Tsvid, J. Kirch, L. J. Mawst, M. Kanskar, J. Cai, R. A. Arif, N. Tansu, P. M. Smowton, and P. Blood, “Radiative Efficiency of InGaAs / InGaAsP / GaAs Quantum Well Lasers,” Proc. of the 20th IEEE Laser and Electro-Optics Society (LEOS) Annual Meeting 2007, paper TuR5, pp. 313-314, Lake Buena Vista, FL, October 2007.
  73. P. Kumnorkaew, Y. K. Ee, N. Tansu, and J. F. Gilchrist, “Rapid Convective Deposition Of Microsphere Monolayers For Fabrication Of Microlens Arrays,” Proc. of the American Institute of Chemical Engineering (AICHE) Annual Meeting 2007, Salt Lake City, UT, November 2007.
  74. H. Li, J. T. Perkins, S. Dutta, H. M. Chan, R. P. Vinci, Y. K. Ee, R. A. Arif, N. Tansu, P. Capek, N. K. Jha, and V. Dierolf, “Sapphire Nano-Patterning and GaN Nano-Heteroepitaxy,” Proc. of the MRS Fall Meeting 2007: Symposium I: Advances in III-V Nitride Semiconductor Materials and Devices, Boston, MA, USA, November-December 2007.
  75. R. A. Arif, Y. K. Ee, H. P. Zhao, and N. Tansu, “Radiative Efficiency and Spontaneous Recombination Rate of Staggered InGaN Quantum Wells Light Emitting Diodes Emitting at 420-510 nm,” Proc. of the SPIE Photonics West 2008, Light-Emitting Diodes: Research, Manufacturing, and Applications XII, vol. 6910, San Jose, CA, Jan 2008.
  76. Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, and N. Tansu, “Comparison of Numerical Modeling and Experiments of InGaN Quantum Wells Light Emitting Diodes with SiO2 / Polystyrene Microlens Arrays,” Proc. of the SPIE Photonics West 2008, Light-Emitting Diodes: Research, Manufacturing, and Applications XII, vol. 6910, San Jose, CA, Jan 2008.
  77. H. P. Zhao, R. A. Arif, Y. K. Ee, and N. Tansu, “Optical Gain and Spontaneous Emission of Strain-Compensated InGaN-AlGaN Quantum Wells Including Carrier Screening Effect,” Proc. of the SPIE Photonics West 2008, Physics and Simulation of Optoelectronics Devices XVI, vol. 6889, San Jose, CA, Jan 2008.
  78. S. K. Tripathy, G. Xu, X. Mu, Y. J. Ding, M. Jamil, R. A. Arif, and N. Tansu, “Resonant Raman Scattering of Coherent Picosecond Pulses by One and Two Longitudinal-Optical Phonons in GaN Film Grown on Silicon (111) Substrate,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2008, paper CFU5, San Jose, CA, May 2008.
  79. R. A. Arif, H. P. Zhao, and N. Tansu, “InGaN-GaNAs Type-II ’W’ Quantum Well Lasers for Emission at 450-nm,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2008, paper CMI4, San Jose, CA, May 2008.
  80. H. P. Zhao, R. A. Arif, G. S. Huang, Y. K. Ee, and N. Tansu, “Self-Consistent Optical Gain Analysis and Epitaxy of Strain-Compensated InGaN-AlGaN Quantum Wells for Laser Applications,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2008, paper CMI2, San Jose, CA, May 2008.
  81. R. A. Arif, H. P. Zhao, Y. K. Ee, S. T. Penn, V. Dierolf, and N. Tansu, “Spontaneous Recombination Rate and Luminescence Efficiency of Staggered InGaN Quantum Wells Light Emitting Diodes,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2008, paper CMAA2, San Jose, CA, May 2008.
  82. X. Mu, Y. J. Ding, R. A. Arif, M. Jamil, and N. Tansu, “Observation of Enhanced THz Emission from InGaN/GaN Multiple Quantum Wells,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2008, paper CTuX4, San Jose, CA, May 2008.
  83. Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, and N. Tansu, “Size Effects and Light Extraction Efficiency Optimization of III-Nitride Light Emitting Diodes with SiO2 / Polystyrene Microlens Arrays,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2008, paper CMKK6, San Jose, CA, May 2008.
  84. H. P. Zhao, R. A. Arif, Y. K. Ee, and N. Tansu, “Approaches for Low-Threshold ‘Green’ Nitride Lasers Diodes,” IEEE Semiconductor Lasers Workshop 2008, San Jose, CA, May 2008.
  85. M. Jamil, H. P. Zhao, J. Higgins, and N. Tansu, “MOVPE Growth and Photoluminescence of Narrow-Bandgap InN Alloys on GaN / Sapphire Substrate Using Pulsed Growth Mode,” Proc. of the 14th Int. Conf. – Metalorganic Vapor Phase Epitaxy (IC-MOVPE XIV) 2008, Metz, France, June 2008.
  86. (Invited Conference Paper) N. Tansu, R. A. Arif, Y. K. Ee, H. P. Zhao, H. Tong, M. Jamil, and G. S. Huang, “Nano-Engineering of III-Nitride Semiconductor Optoelectronics and New Applications,” Proc. of the International Conferences of Materials and Technologies (CIMTEC) 2008 – 3rd International Conference on Smart Materials, Structures and Systems, Acireale, Sicily, Italy, June 2008.
  87. M. Jamil, H. P. Zhao, J. Higgins, and N. Tansu, “Narrow Band Gap (0.77 eV) InN on GaN / Sapphire Substrate by Pulsed MOCVD Growth Mode,” Proc. of the TMS Electronics Material Conference (EMC) 2008, Santa Barbara, CA, June 2008.
  88. P. Kumnorkaew, Y. K. Ee, N. Tansu, and J. F. Gilchrist, “Rapid Convective Deposition Of Microsphere Monolayers for Fabrication Of Microlens Arrays,” Proc. of the 15th International Congress on Rheology 2008, The Society of Rheology 80th Annual Meeting, Monterey, CA, August 2008.
  89. (Invited Conference Paper) N. Tansu, R. A. Arif, H. P. Zhao, G. S. Huang, and Y. K. Ee, “Polarization Engineering of III-Nitride Nanostructures for High-Efficiency Light Emitting Diodes,” Proc. of the SPIE Optics + Photonics 2008, The 8th International Conference on Solid State Lighting, vol. 7058, paper 7058-45, San Diego, CA, August 2008.
  90. X. Mu, Y. J. Ding, R. A. Arif, M. Jamil, and N. Tansu, “Nonlinear Power Dependence for Efficient THz Generation from InGaN / GaN Multiple Quantum Wells,” Proc. of the 21st IEEE Laser and Electro-Optics Society (LEOS) Annual Meeting 2008, paper ThM3, pp. 788-789, Newport Beach, CA, November 2008.
  91. (Invited Conference Paper) N. Tansu, H. P. Zhao, R. A. Arif, Y. K. Ee, G. Y. Liu, X. H. Li, and G. S. Huang, “Polarization Engineering of InGaN-Based Nanostructures for Low-Threshold Diode Lasers and High-Efficiency Light Emitting Diodes,” Proc. of the IEEE Photonics Global 2008, Nanophotonics Symposium, Singapore, Republic of Singapore, December 2008.
  92. Y. K. Ee, R. A. Arif, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Optimization and Fabrication of III-Nitride Light-Emitting Diodes with Self-Assembled Colloidal-Based Convex Microlens Arrays,” Proc. of the IEEE Photonics Global 2008, Nanophotonics Symposium, Singapore, Republic of Singapore, December 2008.
  93. H. P. Zhao, M. Jamil, G. S. Huang, H. Tong, A. M. Driscoll, and N. Tansu, “Characteristics of InN Semiconductors Grown on Ga-Polar and N-Polar GaN Templates by Pulsed Metalorganic Vapor Phase Epitaxy,” Proc. of the SPIE Photonics West 2009, Gallium Nitride Materials and Devices IV, San Jose, CA, Jan 2009.
  94. H. P. Zhao, R. A. Arif, G. S. Huang, Y. K. Ee, and N. Tansu, “Growths of Staggered InGaN Quantum Wells Light Emitting Diodes at 470-480 nm Employing Graded Temperature Profile,” Proc. of the SPIE Photonics West 2009, LEDs: Materials, Devices, and Applications for Solid State Lighting XIII, San Jose, CA, Jan 2009.
  95. H. P. Zhao, R. A. Arif, and N. Tansu, “Design of Staggered InGaN Quantum Wells for Green Diode Lasers,” Proc. of the SPIE Photonics West 2009, Novel In-Plane Semiconductor Lasers VIII, San Jose, CA, Jan 2009.
  96. H. P. Zhao, R. A. Arif, and N. Tansu, “Analysis of Current Injection Efficiency and Efficiency Droop of InGaN Quantum-Wells Light-Emitting Diodes,” Proc. of the SPIE Photonics West 2009, Physics and Simulation of Optoelectronics Devices XVII, San Jose, CA, Jan 2009.
  97. Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, and N. Tansu, “Enhancement of Light Extraction Efficiency of InGaN Quantum Wells Light-Emitting Diodes with Polydimethylsiloxane Concave Microstructures,” Proc. of the SPIE Photonics West 2009, LEDs: Materials, Devices, and Applications for Solid State Lighting XIII, San Jose, CA, Jan 2009.
  98. H. Tong, H. P. Zhao, Y. K. Ee, V. A. Handara, J. A. Herbsommer, and N. Tansu, “Analysis of Thermoelectric Characteristics of InGaN Semiconductors,” Proc. of the SPIE Photonics West 2009, Physics and Simulation of Optoelectronics Devices XVII, San Jose, CA, Jan 2009.
  99. J. F. Gilchrist, P. Kumnorkaew, N. Tansu, and Y. K. Ee, “Rapid Convective Deposition For Fabrication of Microlens Arrays,” Proc. of the American Physical Society (APS) March Meeting 2009, Session Y14: Nonequilibrium and Templated Assembly, Pittsburgh, PA, March 2009.
  100. S. K. Tripathy, G. Xu, X. Mu, Y. J. Ding, M. Jamil, R. A. Arif, N. Tansu, and J. B. Khurgin, “Observation of Anti-Stokes Fluorescence from GaN Film Grown on Si (111) Substrate,” Proc. of the APS/OSA International Quantum Electronics Conference (IQEC) 2009, Baltimore, MD, May 2009.
  101. G. Xu, Y. J. Ding, H. P. Zhao, M. Jamil, N. Tansu, I. B. Zotova, C. E. Stutz, D. E. Diggs, N. Fernelius, F. K. Hopkins, C. S. Gallinat, G. Koblmüller, and J. S. Speck, “THz Generation from InN Films Based on Interference between Optical Rectification and Photocurrent Surge,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2009, Baltimore, MD, May 2009.
  102. Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, and N. Tansu, “The Use of Polydimethylsiloxane Concave Microstructures Arrays to Enhance Light Extraction Efficiency of InGaN Quantum Wells Light-Emitting Diodes,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2009, Baltimore, MD, May 2009.
  103. Y. K. Ee, J. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Growths of InGaN Quantum Wells Light-Emitting Diodes on Nano-Patterned AGOG Sapphire Substrate Using Abbreviated Growth Mode,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2009, Baltimore, MD, May 2009.
  104. H. P. Zhao, M. Jamil, G. Y. Liu, G. S. Huang, H. Tong, G. Xu, Y. J. Ding, and N. Tansu, “Pulsed Metalorganic Vapor Phase Epitaxy of In-Polar and N-Polar InN Semiconductors on GaN / Sapphire Templates for Terahertz Emitters,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2009, Baltimore, MD, May 2009.
  105. H. P. Zhao, G. Y. Liu, X. H. Li, G. S. Huang, S. Tafon Penn, V. Dierolf, and N. Tansu, “Staggered InGaN Quantum Wells Light-Emitting Diodes at 520-nm Employing Graded Temperature Growths,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2009, Baltimore, MD, May 2009.
  106. G. Sun, S. K. Tripathy, Y. J. Ding, G. Y. Liu, G. S. Huang, H. P. Zhao, N. Tansu, and J. B. Khurgin, “Stark Effect Induced by Photogenerated Carriers in Multiple GaN/AlN Asymmetric Coupled Quantum Wells,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2009, Baltimore, MD, May 2009.
  107. H. P. Zhao, G. S. Huang, G. Y. Liu, X. H. Li, J. D. Poplawsky, S. Tafon Penn, V. Dierolf, and N. Tansu, “Characteristics of Staggered InGaN Quantum Wells Light-Emitting Diodes Emitting at 480-525 nm,” Proc. of the 67th IEEE Device Research Conference (DRC) 2009, University Park, PA, June 2009.
  108. Y. K. Ee, X. H. Li, J. E. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Reduced Dislocation Engineering and Improved Efficiency of III-Nitride Light Emitting Diodes Grown on Nano-Patterned Sapphire using Abbreviated GaN Metalorganic Vapor Phase Epitaxy Growth Mode,” Proc. of the 14th Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE) 2009, Lake Geneva, WI, August 2009.
  109. H. P. Zhao, G. Y. Liu, R. A. Arif, and N. Tansu, “Effect of Current Injection Efficiency on Efficiency-Droop in InGaN Quantum Well Light-Emitting Diodes,” Proc. of the IEEE International Semiconductor Device Research Symposium (ISDRS) 2009, College Park, MD, Nov 2009.
  110. (Invited Conference Paper) H. P. Zhao, G. Y. Liu, R. A. Arif, Y. K. Ee, X. H. Li, J. Zhang, H. Tong, G. S. Huang, and N. Tansu, “Novel Approaches for Efficiency Enhancement in InGaN-Based Light-Emitting Diodes,” Proc. of the 2nd International Conference on White LEDs and Solid State Lighting 2009, Taipei, Taiwan, December 2009.
  111. (Invited Conference Paper) N. Tansu, H. P. Zhao, Y. K. Ee, G. Y. Liu, X. H. Li, and G. S. Huang, “Novel Device Concept for High-Efficiency InGaN Quantum Wells Light-Emitting Diodes,” Proc. of the SPIE Photonics West 2010, Gallium Nitride Materials and Devices V, San Francisco, CA, Jan 2010.
  112. H. Tong, J. A. Herbsommer, V. A. Handara, H. P. Zhao, G. Y. Liu, and N. Tansu, “Thermal Conductivity Measurement of Pulsed-MOVPE InN Alloy Grown on GaN / Sapphire by 3ω Method,” Proc. of the SPIE Photonics West 2010, Gallium Nitride Materials and Devices V, San Francisco, CA, Jan 2010.
  113. H. P. Zhao, G. Y. Liu, and N. Tansu, “Surface Plasmon Dispersion Engineering Utilizing Double-Metallic Ag / Au Layers for InGaN Quantum Wells Light Emitting Diodes,” Proc. of the SPIE Photonics West 2010, LEDs: Materials, Devices, and Applications for Solid State Lighting XIV, San Francisco, CA, Jan 2010.
  114. X. H. Li, H. Tong, H. P. Zhao, and N. Tansu, “Band Structure Calculation of Dilute-As GaNAs by First Principle,” Proc. of the SPIE Photonics West 2010, Physics and Simulation of Optoelectronics Devices XVIII, San Francisco, CA, Jan 2010.
  115. Y. K. Ee, X. H. Li, J. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Abbreviated GaN Metalorganic Vapor Phase Epitaxy Growth Mode on Nano-Patterned Sapphire for Enhanced Efficiency of InGaN-Based Light-Emitting Diodes,” Proc. of the SPIE Photonics West 2010, LEDs: Materials, Devices, and Applications for Solid State Lighting XIV, San Francisco, CA, Jan 2010.
  116. G. Y. Liu, H. P. Zhao, and N. Tansu, “Electron-Phonon and Electron-Photon Intersubband Scattering Rates in Asymmetric AlN / GaN Coupled Quantum Wells,” Proc. of the SPIE Photonics West 2010, Physics and Simulation of Optoelectronics Devices XVIII, San Francisco, CA, Jan 2010.
  117. G. Y. Liu, H. P. Zhao, J. Zhang, G. S. Huang, and N. Tansu, “Growths of Lattice-Matched AlInN Alloys on GaN,” Proc. of the American Physical Society (APS) Annual March Meeting 2010, Portland, Oregon, March 2010.
  118. J. Zhang, H. Tong, G. Y. Liu, J. A. Herbsommer, G. S. Huang, and N. Tansu, “Thermoelectric Properties of MOVPE Grown AlInN Lattice-Matched to GaN,” Proc. of the American Physical Society (APS) Annual March Meeting 2010, Portland, Oregon, March 2010.
  119. X. H. Li, Y. K. Ee, G. Y. Liu, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “MOCVD Epitaxy of GaN by Employing SiO2 Colloidal Microsphere Templates,” Proc. of the American Physical Society (APS) Annual March Meeting 2010, Portland, Oregon, March 2010.
  120. (Invited Conference Paper) H. P. Zhao, G. Y. Liu, X. H. Li, Y. K. Ee, H. Tong, J. Zhang, G. S. Huang, and N. Tansu, “Novel Growth and Device Concepts for High-Efficiency InGaN Quantum Wells Light-Emitting Diodes,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2010, San Jose, CA, May 2010.
  121. G. Y. Liu, H. P. Zhao, J. H. Park, L. J. Mawst, and N. Tansu, “Growths of Ultra High Density InGaN-Based Quantum Dots on Self-Assembled Diblock Copolymer Nanopatterns,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2010, San Jose, CA, May 2010.
  122. G. Sun, S. K. Tripathy, Y. J. Ding, G. Y. Liu, G. S. Huang, H. P. Zhao, N. Tansu, and J. B. Khurgin, “Photoluminescence Emission in Deep Ultraviolet Region from GaN/AlN Asymmetric-Coupled Quantum Wells,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2010, San Jose, CA, May 2010.
  123. G. Sun, S. K. Tripathy, Y. J. Ding, G. Y. Liu, H. P. Zhao, G. S. Huang, N. Tansu, and J. B. Khurgin, “Photoluminescence Quenching due to Relocation of Electrons in GaN/AlN Asymmetric-Coupled Quantum Wells,” Proc. of the OSA/APS Quantum Electronics and Laser Sciences (QELS) 2010, San Jose, CA, May 2010.
  124. Y. K. Ee, X. H. Li, J. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Growth Evolution and Time-Resolved Measurements of III-Nitride Light-Emitting Diodes Grown by Abbreviated Growth Mode on Patterned AGOG Substrate,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2010, San Jose, CA, May 2010.
  125. (Invited Conference Paper) H. P. Zhao, J. Zhang, G. Y. Liu, X. H. Li, Y. K. Ee, H. Tong, T. Toma, G. S. Huang, and N. Tansu, “Approaches for High-Efficiency InGaN Quantum Wells Light-Emitting Diodes – Device Physics and Epitaxy Engineering,” Proc. of the American Vacuum Society (AVS) Meeting 2010, Ann-Arbor, MI, May 2010.
  126. X. H. Li, S. Dutta, T. Krentz, T. B. Kim, R. P. Vinci, N. Tansu, and H. M. Chan, “MOCVD GaN Growth on Vermicular Sol-Gel Derived Sapphire Coatings,” Proc. of 4th International Conference on Molecular Materials 2010 (MOLMAT 2010), Montpellier, France, July 2010.
  127. (Invited Conference Paper) N. Tansu, H. P. Zhao, G. Y. Liu, X. H. Li, J. Zhang, H. Tong, G. S. Huang, and Y. K. Ee, “Novel Device Concepts and Growths for High-Efficiency III-Nitride Light-Emitting Diodes,” Proc. of the International Union of Materials Research Societies - International Conference on Electronic Materials (IUMRS-ICEM) 2010, Seoul, Korea, August 2010.
  128. S. Dutta, T. Krentz, X. H. Li, T. B. Kim, R. P. Vinci, N. Tansu, and H. M. Chan, “Microstructural Evolution of Alumina Sol-gel Coatings on Sapphire,” Proc. of Materials Science & Technology 2010, Sol-Gel Fundamentals and Applications, Houston, TX, October 2010.
  129. H. P. Zhao, J. Zhang, T. Toma, G. Y. Liu, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Cathodoluminescence Characteristics of Linearly-Shaped Staggered InGaN Quantum Wells Light-Emitting Diodes,” Proc. of the 23rd Annual Meeting of the IEEE Photonics Society, Paper WY4, Denver, CO, November 2010.
  130. J. Zhang, H. P. Zhao, and N. Tansu, “Gain and Spontaneous Emission Characteristics of High Al-Content AlGaN Quantum Well Lasers,” Proc. of the 23rd Annual Meeting of the IEEE Photonics Society, Paper MI4, Denver, CO, November 2010.
  131. G. Y. Liu, H. P. Zhao, J. Zhang, H. Tong, G. S. Huang, and N. Tansu, “Growths of Lattice-Matched AlInN / GaN for Optoelectronics Applications,” Proc. of the 23rd Annual Meeting of the IEEE Photonics Society, Paper WY5, Denver, CO, November 2010.
  132. (Invited Conference Paper) N. Tansu, H. P. Zhao, J. Zhang, G. Y. Liu, X. H. Li, T. Toma, and G. S. Huang, “Novel Approaches for High-Efficiency InGaN Quantum Wells Light-Emitting Diodes – Device Physics and Epitaxy Engineering,” Proc. of the SPIE Photonics West 2011, LEDs: Materials, Devices, and Applications for Solid State Lighting XV, San Francisco, CA, Jan 2011.
  133. H. P. Zhao, J. Zhang, T. Toma, G. Y. Liu, J. D. Poplawsky, V. Dierolf, and N. Tansu, “MOCVD Growths of Linearly-Shaped Staggered InGaN Quantum Wells Light-Emitting Diodes at Green Spectral Regime,” Proc. of the SPIE Photonics West 2011, Gallium Nitride Materials and Devices VI, San Francisco, CA, Jan 2011.
  134. J. Zhang, H. P. Zhao, and N. Tansu, “Gain Characteristics of Deep UV AlGaN Quantum Wells Lasers,” Proc. of the SPIE Photonics West 2011, Novel In-Plane Semiconductor Lasers X, San Francisco, CA, Jan 2011.
  135. J. Zhang, H. Tong, G. Y. Liu, J. A. Herbsommer, G. S. Huang, and N. Tansu, “Thermoelectric Properties of MOCVD-Grown AlInN Alloys with Various Compositions,” Proc. of the SPIE Photonics West 2011, Gallium Nitride Materials and Devices VI, San Francisco, CA, Jan 2011.
  136. H. Tong, J. Zhang, J. A. Herbsommer, and N. Tansu, “Analysis of Thermoelectric Properties of AlInN Semiconductor Alloys,” Proc. of the SPIE Photonics West 2011, Physics and Simulation of Optoelectronics Devices XIX, San Francisco, CA, Jan 2011.
  137. X. H. Li, Y. K. Ee, R. B. Song, and N. Tansu, “Enhancement of Light Extraction Efficiency of InGaN Quantum Wells Light-Emitting Diodes Using TiO2 Microsphere Arrays,” Proc. of the SPIE Photonics West 2011, LEDs: Materials, Devices, and Applications for Solid State Lighting XV, San Francisco, CA, Jan 2011.
  138. J. Zhang, H. Tong, and N. Tansu, “Thermal Conductivity Characteristics of Three-Layer Superlattices,” Proc. of the American Physical Society (APS) Annual March Meeting 2011, Dallas, Texas, March 2011.
  139. H. P. Zhao, J. Zhang, T. Toma, G. Y. Liu, J. D. Poplawsky, V. Dierolf, and N. Tansu, “MOCVD Growths of Linearly-Shaped Staggered InGaN Quantum Wells Light-Emitting Diodes,” Proc. of the American Physical Society (APS) Annual March Meeting 2011, Dallas, Texas, March 2011.
  140. R. B. Song, L. Zhao, G. Y. Liu, J. Zhang, and N. Tansu, “Growths of InGaN Quantum Wells on GaN Micropyramids,” Proc. of the American Physical Society (APS) Annual March Meeting 2011, Dallas, Texas, March 2011.
  141. J. W. Ferguson, P. Blood, P. M. Smowton, H. Bae, T. Sarmiento, J. S. Harris, N. Tansu, and L. J. Mawst, “Optical Gain in GaInNAs and GaInNAsSb Quantum Wells”, Proc. of the Semiconductor and Integrated Optoelectronics (SIOE) 2011, Cardiff, Wales, UK, April 2011.
  142. H. P. Zhao, J. Zhang, G. Y. Liu, and N. Tansu, “Surface Plasmon Dispersion Engineering via Double-Metallic Au / Ag Layers for Nitride Light-Emitting Diodes,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2011, Paper CWF5, Baltimore, MD, May 2011.
  143. J. Zhang, H. P. Zhao, and N. Tansu, “High TE-Polarized Optical Gain from AlGaN-Delta-GaN Quantum Well for Deep UV Lasers,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2011, Paper JTuD4, Baltimore, MD, May 2011.
  144. X. H. Li, Y. K. Ee, R. B. Song, and N. Tansu, “Fabrication of Self-Assembled Silica / Polystyrene Microlens Arrays for Light Extraction Enhancement in Nitride Light-Emitting Diodes,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2011, Paper CML4, Baltimore, MD, May 2011.
  145. G Y. Liu, H. P. Zhao, J. Zhang, and N. Tansu, “Growths of InGaN-Based Light-Emitting Diodes with AlInN Thin Barrier for Efficiency Droop Suppression,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2011, Paper CMDD6, Baltimore, MD, May 2011.
  146. G. Sun, G. B. Xu, Y. J. Ding, H. P. Zhao, G Y. Liu, J. Zhang, and N. Tansu, “High-Power Terahertz Generation due to Dipole Radiation within InGaN/GaN Multiple Quantum Wells,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2011, Paper CMM4, Baltimore, MD, May 2011.
  147. J. W. Ferguson, P. Blood, P. M. Smowton, H. Bae, T. Sarmiento, J. S. Harris, N. Tansu, and L. J. Mawst, “Optical Gain in GaInNAs and GaInNAsSb Quantum Wells,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2011, Paper CFL4, Baltimore, MD, May 2011.
  148. G. B. Xu, G. Sun, Y. J. Ding, H. P. Zhao, G. Y. Liu, J. Zhang, and N. Tansu, “Investigation of Blueshift of Photoluminescence Emission Peak in InGaN/GaN Multiple Quantum Wells,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2011, Paper JWA70, Baltimore, MD, May 2011.
  149. W. Koo, W. Yun, X. H. Li, R. B. Song, N. Tansu, and F. So, “Light extraction from organic light emitting diodes by silica microsphere array pattern,” Proc. of the SPIE Optics + Photonics 2011, The 11th International Conference on Solid State Lighting, vol. 8115, paper 8115-57, San Diego, CA, August 2011.
  150. (Invited Conference Paper) H. P. Zhao, J. Zhang, and N. Tansu, “Physics of Novel III-Nitride Gain Media for Visible and Ultraviolet Lasers,” Proc. of the 24th Annual Meeting of the IEEE Photonics Society, Arlington, VA, October 2011.
  151. L. F. Xu, D. Patel, C. S. Menoni, J. Y. Yeh, L. J. Mawst, and N. Tansu, “Investigation of the Carrier Escape and Capture Processes in InGaAsN Quantum Well Lasers,” Proc. of the 24th Annual Meeting of the IEEE Photonics Society, Arlington, VA, October 2011.
  152. W. Youn, W. H. Koo, X. H. Li, N. Tansu, and F. So,”Organic Light Emitting Diodes with Silica/Polystyrene Diffraction Grating for Improved out-Coupling Efficiency,” Proc. MRS Fall Meeting 2011, Symposium R: Compliant Electronics and Photonics, Paper R8:5, November 2011.
  153. G. Y. Liu, J. Zhang, H. P. Zhao, and N. Tansu, “Device Characteristics of InGaN Quantum Well Light-Emitting Diodes with AlInN Thin Barrier Insertion,” Proc. of the SPIE Photonics West 2012, Gallium Nitride Materials and Devices VII, San Francisco, CA, Jan 2012.
  154. J. Zhang, H. P. Zhao, and N. Tansu, “Engineering of AlGaN-Delta-GaN Quantum Wells Gain Media for Mid- and Deep-Ultraviolet Lasers,” Proc. of the SPIE Photonics West 2012, Novel In-Plane Semiconductor Lasers XI, San Francisco, CA, Jan 2012.
  155. J. Zhang, and N. Tansu, “Spontaneous Emission Characteristics of InGaN Quantum Wells Light-Emitting Diodes on Ternary InGaN Substrates,” Proc. of the SPIE Photonics West 2012, LEDs: Materials, Devices, and Applications for Solid State Lighting XVI, San Francisco, CA, Jan 2012.
  156. G. Y. Liu, J. D. Poplawsky, J. Zhang, V. Dierolf, H. P. Zhao, and N. Tansu, “Quantum Efficiency Characterizations of Staggered InGaN Quantum Wells Light-Emitting Diodes by Temperature-Dependent Electroluminescence Measurement,” Proc. of the SPIE Photonics West 2012, LEDs: Materials, Devices, and Applications for Solid State Lighting XVI, San Francisco, CA, Jan 2012.
  157. (Invited Conference Talk) N. Tansu, J. Zhang, G. Y. Liu, C. K. Tan, P. F. Zhu, and H. P. Zhao, “Advances in III-Nitride Semiconductors for Energy Efficiency Applications,” Proc. of the KAUST-UCSB-NSF Solid State Lighting Workshop 2012, Thuwal, Saudi Arabia, February 2012.
  158. G. Sun, R. Chen, Y. J. Ding, H. P. Zhao, G. Y. Liu, J. Zhang, and N. Tansu, “Strikingly Different Behaviors of Photoluminescence Intensity and Terahertz Output Power versus Period of InGaN/GaN Quantum Wells,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2012, San Francisco, CA, May 2012.
  159. (Invited Keynote Plenary Conference Talk) N. Tansu, J. Zhang, G. Y. Liu, C. K. Tan, P. F. Zhu, and H. P. Zhao, “Physics and Technology of III-Nitride Semiconductors for Energy Efficiency Applications,” Proc. of the IUMRS-ICYRAM Conference 2012, Material Research Society (MRS), Singapore, July 2012.
  160. (Invited Conference Paper) J. Zhang, G. Y. Liu, C. K. Tan, P. F. Zhu, H. P. Zhao, andN. Tansu, “Engineering Nanostructures in Active Regions and Devices for High-Efficiency III-Nitride Light-Emitting Diodes – Epitaxy and Physics,” Proc. of the SPIE Optics + Photonics 2012, NanoEpitaxy : Materials and Devices IV, San Diego, CA, August 2012.
  161. W. H. Koo, W. Youn, P. F. Zhu, X. H. Li, N. Tansu, and F. So, “Light extraction from OLEDS by defective hexagonal-close-packed silica array,” Proc. of the SPIE Optics + Photonics 2012, Organic Electronics + Photonics, San Diego, CA, August 2012.
  162. G. Y. Liu, J. Zhang, C. K. Tan, and N. Tansu, “Characteristics of InGaN Quantum Wells Light-Emitting Diodes with Thin AlGaInN Barrier Layers,” Proc. of the IEEE Photonics Conference 2012, Burlingame, CA, September 2012.
  163. J. Zhang, and N. Tansu, “Gain and Laser Characteristics of InGaN Quantum Wells on Ternary InGaN Substrates,” Proc. of the IEEE Photonics Conference 2012, Burlingame, CA, September 2012.
  164. C. K. Tan, J. Zhang, X. H. Li, G. Y. Liu, and N. Tansu, “Dilute-As GaNAs Semiconductor for Visible Emitters,” Proc. of the IEEE Photonics Conference 2012, Burlingame, CA, September 2012.
  165. P. F. Zhu, J. Zhang, G. Y. Liu, and N. Tansu, “FDTD Modeling of InGaN-Based Light-Emitting Diodes with Microsphere Arrays,” Proc. of the IEEE Photonics Conference 2012, Burlingame, CA, September 2012.
  166. (Invited Conference Paper) N. Tansu, J. Zhang, G. Y. Liu, H. P. Zhao, C. K. Tan, and P. F. Zhu, “Physics of High-Efficiency III-Nitride Quantum Wells Light-Emitting Diodes,” Proc. of the Asian Communications and Photonics (ACP) Conference 2012, Guangzhou, China, November 2012.
  167. (Invited Conference Paper) J. Zhang, H. Tong, G. Y. Liu, and N. Tansu, “III-Nitride Based Thermoelectric – Current Status and Future Potential,” in Proc. of the Asian Communications and Photonics (ACP) Conference 2012, Guangzhou, China, November 2012.
  168. H. P. Zhao, X. C. Jiao, and N. Tansu, “Analysis of Position and Thickness Dependences of Delta Layer in InGaN-Delta-InN Quantum Wells Light-Emitting Diodes,” Proc. of the Asian Communications and Photonics (ACP) Conference 2012, Guangzhou, China, November 2012.
  169. G. Y. Liu, J. Zhang, C. K. Tan, and N. Tansu, “InGaN-Delta-InN Quantum Well Light-Emitting Diodes with Carrier Transport Effect,” Proc. of the SPIE Photonics West 2013, San Francisco, CA, January 2013.
  170. J. Zhang, and N. Tansu, “Optical and Polarization Properties with Staggered AlGaN Quantum Wells for Mid- and Deep-Ultraviolet Lasers and Light Emitting Diodes,” Proc. of the SPIE Photonics West 2013, San Francisco, CA, January 2013.
  171. P. F. Zhu, P. O. Weigel, G. Y. Liu, J. Zhang, A. L. Weldon, T. Muangnaphor, J. F. Gilchrist, and N. Tansu, “Optimization of Deposition Conditions for Silica / Polystyrene Microlens and Nanolens Arrays for Light Extraction Enhancement in GaN Light-Emitting Diodes,” Proc. of the SPIE Photonics West 2013, San Francisco, CA, January 2013.
  172. C. K. Tan, J. Zhang, G. Y. Liu, and N. Tansu, “Effect of Interband Energy Separation on the Interband Auger Processes in III-Nitride Semiconductors,” Proc. of the SPIE Photonics West 2013, San Francisco, CA, January 2013.
  173. G. Sun, R. Chen, Y. J. Ding, H. P. Zhao, G. Y. Liu, J. Zhang, and N. Tansu, “Complementing Trends of Photoluminescence and Terahertz Intensities in Staggered InGaN Quantum Wells,” Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2013, San Jose, CA, June 2013.
  174. (Tutorial Conference Paper) N. Tansu, J. Zhang, G. Y. Liu, H. P. Zhao, C. K. Tan, and P. F. Zhu, “Internal and External Efficiency in InGaN-Based Light-Emitting Diodes,” Proc. of the Asian Communications and Photonics (ACP) Conference 2013, Beijing, China, November 2013.
  175. (Invited Conference Paper) J. Zhang, N. Tansu, “Superlattice Physics for Minimal Thermal Conductivity,” Proc. of the Asian Communications and Photonics (ACP) Conference 2013, Beijing, China, November 2013.
  176. P. F. Zhu, C. K. Tan, and N. Tansu, “Extraction Efficiency Enhancement of Thin-Film Flip-Chip GaN Light-Emitting Diodes with Self-Assembled Microsphere Arrays,” Proc. of the International Conference on White LEDs and Solid State Lighting (WLED 5) Conference 2014, Jeju, Korea, June 2014.
  177. C. K. Tan, P. F. Zhu, and N. Tansu, “Investigation of Dilute-As GaNAs Active Regions for High Efficiency GaN-based Light-Emitting Diodes,” Proc. of the International Conference on White LEDs and Solid State Lighting (WLED 5) Conference 2014, Jeju, Korea, June 2014.
  178. C. K. Tan, P. F. Zhu, and N. Tansu, “Controlling the Interband Auger Recombination Mechanism in III-Nitride Based Ternary Active Regions,” Proc. of the SPIE Optics + Photonics 2014, Thirteenth International Conference on Solid State Lighting and LED-based Illumination Systems, San Diego, CA, August 2014.
  179. P. F. Zhu, C. K. Tan, and N. Tansu, “Comparison of Extraction Efficiency for Thin-Film Flip-Chip InGaN Light-Emitting Diodes with Microsphere and Microconcave Array Structures,” Proc. of the SPIE Optics + Photonics 2014, Thirteenth International Conference on Solid State Lighting and LED-based Illumination Systems, San Diego, CA, August 2014.
  180. P. F. Zhu, H. Y. Zhu, W. P. Qin, C. K. Tan, and N. Tansu, “Eu3+-doped TiO2 Nanospheres for GaN-based White Light-Emitting Diodes,” Proc. of the SPIE Optics + Photonics 2014, Thirteenth International Conference on Solid State Lighting and LED-based Illumination Systems, San Diego, CA, August 2014.
  181. P. F. Zhu, T. Toma, C. K. Tan, and N. Tansu, “Investigation of Solar Hydrogen Generation from the GaN and InGaN Thin Films,” Proc. of the SPIE Optics + Photonics 2014, Solar Energy + Technology, San Diego, CA, August 2014.

Invited Lectures or Seminars

  1. Nelson Tansu, “Design Considerations, Lasing Characteristics, and Temperature Analysis of Highly-Strained InGaAs(N)-GaAsP-GaAs (l> 1.17-1.3 mm) Quantum Well Lasers,” Center for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Republic of Singapore, July 2001.
  2. Nelson Tansu, ”High Performance InGaAsN Quantum Well Lasers for Optical Communications,” Institute of Experimental Physics II, Department of Physics, The University of Leipzig (Universität Leipzig), Leipzig, Germany, June 2002.
  3. Nelson Tansu, “High Performance MOCVD-InGaAsN Quantum Well Lasers for Long Wavelength Emission on GaAs,” Laser and Quantum Electronics Seminar, Institute of Quantum Electronics, Department of Physics, Swiss Federal Institute of Technology-Zurich (Eidgenössisch Technisch Hochschule-Zurich), Zurich, Switzerland, June 2002.
  4. Nelson Tansu, ”Long Wavelength Semiconductor Lasers based on Dilute-Nitride Quantum Well,” Solid State Physics Seminar, Blackett Laboratory, Department of Physics, Imperial College of Science, Technology, and Medicine, The University of London, London, United Kingdom, June 2002.
  5. Nelson Tansu, ”High Performance MOCVD-InGaAsN Quantum Well Lasers,” Center for Communications Research, Department of Electrical and Electronic Engineering, The University of Bristol, Bristol, United Kingdom, June 2002.
  6. Nelson Tansu, ”High Performance Dilute-Nitride Quantum Well Lasers for Optical Communications,” Optical Communications Seminar, Department of Engineering-Electrical Engineering, The University of Cambridge, Cambridge, United Kingdom, June 2002.
  7. Nelson Tansu, ”High Performance Dilute-Nitride Quantum Well Lasers,” Lasers and Quantum Electronics Seminar, Department of Electronics Systems Engineering, The University of Essex, Colchester, United Kingdom, June 2002.
  8. Nelson Tansu, ”MOCVD-InGaAsN Quantum Well Lasers,” Ipswich Components Operation, Agilent Technologies UK Limited, Ipswich, United Kingdom, June 2002.
  9. Nelson Tansu, ”High-Performance 1300-nm InGaAsN Quantum Well Lasers by Metal-Organic Vapor Phase Epitaxy,” AlfaLight Inc., Madison, Wisconsin, USA, July 2002.
  10. Nelson Tansu, ”High-Performance 1300-nm Dilute-Nitride Quantum-Well Lasers for Optical Communications,” Optical Physics Research Laboratory, Physical Sciences Laboratory, Bell Laboratories-Lucent Technologies, Murray Hills, New Jersey, USA, September 2002.
  11. Nelson Tansu, ”High-Performance 1300-nm InGaAsN Quantum-Well Lasers for Optical Communications,” Compound Semiconductor Seminar, Department of Electrical Engineering, Faculty of Engineering, Yale University, New Haven, Connecticut, USA, September 2002.
  12. Nelson Tansu, ”High-Performance 1300-nm InGaAsN Quantum-Well Lasers for Optical Communications with Conventional MOCVD Technology,” Optical Communication Seminar, Infineon Technologies AG, Munich, Germany, October 2002.
  13. Nelson Tansu, ”The Dilute-Nitride and Phosphide-Based Quantum-Wells Edge-Emitters and VCSELs for Optical Communications,” Institute of Electro-Optical Engineering, College of Electrical Engineering and Computer Science, National Chiao-Tung University, Hsinchu, Republic of China (Taiwan), October 2002.
  14. Nelson Tansu, ”High-Performance Quantum-Well Lasers for 850-nm and 1300-nm Regimes,” Department of Electrical and Computer Engineering, P. C. Rossin College of Engineering and Applied Science, Lehigh University, Bethlehem, Pennsylvania, USA, November 2002.
  15. Nelson Tansu, ”High-Performance 1200-1370 nm Long Wavelength Lasers on GaAs by MOCVD,” School of Engineering Science, Faculty of Applied Sciences, Simon Fraser University, Vancouver, British Columbia, Canada, February 2003.
  16. Luke J. Mawst, Nelson Tansu, and Jeng-Ya Yeh, ”High-Performance MOCVD-Grown InGaAsN Quantum-Well Lasers,” Microelectronics/Photonics Seminar, Department of Electrical and Computer Engineering, College of Engineering, University of Illinois-Urbana Champaign, Urbana Champaign, Illinois, USA, March 2003.
  17. Nelson Tansu, ”Dilute-Nitride Semiconductor Nanostructure for Near-Infrared and Mid-Infrared Optoelectronics,” Electronics Research and Development Department, Air Products and Chemicals Inc., Allentown, Pennsylvania, USA, October 2005.
  18. Nelson Tansu, ”Dilute-Nitride Semiconductor Nanostructure for Near-Infrared and Mid-Infrared Lasers,” Photonics Seminar Series, Department of Electrical and Computer Engineering, College of Engineering, Cornell University, Ithaca, New York, USA, November 2005.
  19. Nelson Tansu, ” Type-I and Type-II InGaAsN-Based Quantum Wells for Visible up to Mid-Infrared Lasers,” EE Departmental Seminar Series, Department of Electrical Engineering, School of Engineering, The University of Pittsburgh, Pittsburgh, Pennsylvania, USA, February 2006.
  20. Nelson Tansu, ”High Efficiency Nitride-Based Light Emitting Diodes for Solid State Lightings,” IMRE Seminar, A-STAR Institute of Material Research and Engineering (IMRE), Republic of Singapore, September 2007.
  21. Nelson Tansu, ”High Efficiency Nitride-Based Light Emitting Diodes for Solid State Lightings,” School of Electrical and Electronic Engineering, Nanyang Technological University, Republic of Singapore, September 2007.
  22. Nelson Tansu, ”Solid State Lighting and Semiconductor Photovoltaic: A Tutorial,” Center for Optical Technologies (COT) Open House 2007 – Tutorial Series, Lehigh University, Bethlehem, Pennsylvania, USA, October 2007.
  23. Nelson Tansu, ”High Efficiency Nitride-Based Light Emitting Diodes for Solid State Lightings,” ECE Seminar Series, Department of Electrical and Computer Engineering, University of Illinois-Urbana Champaign, Urbana Champaign, Illinois, USA, November 2007.
  24. Nelson Tansu, ”Physics of III-Nitride and Dilute-Nitride Nanostructures for Optoelectronics Devices,” Institute of Optical and Electronics Material, Technische Universität Hamburg-Harburg (Technical University of Hamburg-Harburg), Hamburg, Germany, June 2008.
  25. Nelson Tansu, ”III-Nitride Photonics: From UV, Visible Up to Terahertz,” ECE Seminar Series, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin, USA, November 2009.
  26. Nelson Tansu, ”Tutorial on Semiconductor Energy-Based Technologies: Solid State Lighting + Solar Energy + Thermoelectric + Power Electronics,” Center for Optical Technologies (COT) Open House 2010 – Tutorial Series, Lehigh University, Bethlehem, Pennsylvania, USA, October 2010.
  27. Nelson Tansu, ”III-Nitride Semiconductor Device Technologies for Energy Applications,” Center for Optical Technologies (COT) Open House 2011, Lehigh University, Bethlehem, Pennsylvania, USA, November 2011.
  28. Nelson Tansu, “Tutorial on Physics and Engineering of III-Nitride Quantum Heterostructures for Photonics and Energy Efficiency Technologies,” Tutorial Invited Talk, Department of Physics, University of Indonesia, Depok, Indonesia, June 2013.
  29. Nelson Tansu, “Physics and Engineering of III-Nitride Quantum Heterostructures for Photonics and Energy Efficiency Technologies,” ECE Seminar, Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Republic of Singapore, July 2013.
  30. Nelson Tansu, “Physics and Engineering of III-Nitride Quantum Heterostructures for Photonics and Energy Efficiency Technologies,” EEE Seminar, Department of Electronics and Electrical Engineering, Nanyang Technological University, Singapore, Republic of Singapore, July 2013.
  31. Nelson Tansu, “Tutorial on Physics and Engineering of III-Nitride Quantum Heterostructures for Photonics and Energy Efficiency Technologies,” MSE Seminar Series, Department of Material Sciences and Engineering, University of Wisconsin-Madison, Madison, Wisconsin, USA, October 2013.

Books or Book Chapters

  1. (Invited Book Chapter) Nelson Tansu, Ronald A. Arif, and Zhian Jin, ”Semiconductor Nano-electronics and Nano-optoelectronics,” Book Chapter in “The Electrical Engineering Handbook” (Editor-in-Chief: Dr. Richard C. Dorf), 3rd Edition, CRC Press and IEEE Press, 2006.
  2. (Invited Book Chapter) Nelson Tansu, and L. Apker, ”Physics and Devices of Photemission,” Book Chapter in “The Mc-Graw-Hill Encyclopedia of Science and Technology” (Editor-in-Chief: Dr. Edwin C. Kan), 10th Edition, McGraw-Hill Press, 2007.
  3. (Invited Book Chapter) Nelson Tansu, and Luke J. Mawst, ”Dilute-Nitride Quantum Well Lasers by Metalorganic Chemical Vapor Deposition,” Book Chapter in “Dilute-Nitrides: Physics and Applications” (Edited by: Dr. Ayse Erol), Springer Verlag, January 2008.
  4. (Invited Book Chapter) Ronald A. Arif, and Nelson Tansu, ”Interdiffused InGaAsSbN Quantum Well for 1300-1550 Diode Lasers on GaAs,” Book Chapter in “Dilute-Nitrides: Physics and Applications” (Edited by: Dr. Ayse Erol), Springer Verlag, January 2008.
  5. (Invited Book Chapter) Luke J. Mawst, and Nelson Tansu, ”MOCVD Epitaxy of Dilute-Nitride Quantum Well Lasers,” Book Chapter in “Nitrides and Dilute Nitrides: Growth, Physics and Devices” (Edited by: Dr. Javier Miguel-Sanchez), Research Signpost, 2008. ISBN: 81-7895-250-5.
  6. (Invited Book Chapter) Luke J. Mawst, and Nelson Tansu, ”Quantum Well Lasers and Their Applications,” Book Chapter in “Comprehensive Semiconductor Science and Technology” (Edited by: Prof. P. K. Bhattacharya, Prof. R. Fornani, and Prof. H. Kamimura), Elsevier, January 2011. ISBN 10: 0-444-53143-2; ISBN 13: 978-0-444-53143-8.
  7. Nelson Tansu, “Applied Quantum Mechanics for Engineers”, Draft Version, 2004-2010 (in progress).

Patents and Invention Disclosures

  1. Nelson Tansu, and Luke J. Mawst, “Type-II Quantum Well Optoelectronics Devices,” Novel techniques to achieve 1500-3000 nm wavelength emission on GaAs”, US Patent No. 6,791,104; approved on September 14th 2004 (filed on September 26th 2002). (pdf)
  2. Luke J. Mawst, Nelson Tansu, and et.al., “Narrow Lateral Waveguide Lasers,” Novel techniques to achieve high power single mode edge emitting lasers, US Patent No. 6,845,116; approved on January 18th 2005. (pdf)
  3. Luke J. Mawst, Nelson Tansu, Igor Vurgaftmann, and Jerry R. Meyer, “Type-II Quantum Well Mid-Infrared Optoelectronic Devices“ Novel techniques to achieve 3000-5000 nm wavelength emission lasers, US Patent No. 7,256,417; approved on August 14th 2007. (pdf)
  4. Luke J. Mawst, Nelson Tansu, and Jeng-Ya Yeh, “Quantum Well Lasers with Strained Quantum Wells and Dilute Nitride Barriers”. Novel techniques on dilute-nitride semiconductor for long wavelength lasers on GaAs, US Patent No. 7,457,338; approved on November 25th 2008. (pdf)
  5. Nelson Tansu, Ronald A. Arif, and Yik Khoon Ee, “Gallium Nitride-Based Device and Method”. Novel techniques to achieve high performance visible LEDs and lasers, US Patent No. 7,518,139; approved on April 14th 2009. (pdf)
  6. Nelson Tansu, Ronald A. Arif, and Yik Khoon Ee, “Gallium Nitride-Based Device and Method”. Novel techniques to achieve high performance visible LEDs and lasers, US Patent No. 7,842,531; approved on November 30th 2010. (pdf)
  7. Nelson Tansu, Ronald A. Arif, and Yik Khoon Ee, “Graded In-Content Gallum Nitride-Based Device and Method”. Novel techniques to achieve high performance visible LEDs and lasers, US Patent No. 8,030,641; approved on October 4th 2011. (pdf)
  8. Nelson Tansu, Yik Khoon Ee, James F. Gilchrist, Pisist Kumnorkaew, and Ronald A. Arif, "Light Extraction Method and Device", Novel techniques to achieve large light extraction efficiency of nitride-based LEDs using a low cost and straight forward approach, US Patent No. 8,076,667, approved on December 13th 2011. (pdf)
  9. Nelson Tansu, Helen M. Chan, Richard P. Vinci, Yik-Khoon Ee, and Jeffrey Biser, “An Abbreviated Epitaxial Growth Mode (AGM) Method for Reducing Cost and Improving Quality of LEDs and Lasers”, Patterned sapphire substrates and abbreviated MOVPE method for growing epitaxial III-Nitride semiconductor compounds on them, US Patent No. 8,541,252; approved on September 24th 2013. (pdf)
  10. Nelson Tansu, Xiao-Hang Li, Hongping Zhao, Guangyu Liu, Gensheng Huang, James F. Gilchrist, and Pisist Kumnorkaew, Novel Supercontinuum Broadband White Light-Emitting Diodes. (US Patent Approved). (pdf)
  11. Nelson Tansu, James F. Gilchrist, Yik-Khoon Ee, and Pisist Kumnorkaew, Light Extraction Efficiency Enhancement of Nitride Light-Emitting Diodes with Polydimethylsiloxane Concave Microstructures. (US Patent Approved). (pdf)
  12. Nelson Tansu, Ronald A. Arif, Yik Khoon Ee, and Hongping Zhao, Novel approach using polarization engineering for achieving nitride-based gain media with significant enhancement in radiative recombination rate and optical gain for high efficiency LEDs and lasers. (US Patent Approved). (pdf)
  13. Nelson Tansu, Hongping Zhao, and Guangyu Liu, Novel Surface Plasmon Based Light-Emitting Diodes. (US Patent Approved).
  14. Nelson Tansu, Hua Tong, Jing Zhang, Guangyu Liu, and Gensheng Huang, Novel techniques to achieve high thermoelectric figure of merit based on nitride semiconductor. (US Patent Pending).
  15. Nelson Tansu, Hongping Zhao, and Guangyu Liu, Novel Staggered InGaN Quantum Well Light-Emitting Diodes. (US Patent Pending).
  16. Nelson Tansu, Guangyu Liu, and Hongping Zhao, Ultrahigh Density Nitride Quantum Dots. (US Patent Pending).
  17. Nelson Tansu, Hongping Zhao, Guangyu Liu, and Ronald Arif, Methods to Suppress Efficiency Droop for High Power Nitride Light-Emitting Diodes. (US Patent Pending).